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BZX55C3V0

Description
3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size70KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

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BZX55C2V4~BZX55C100
AXIAL LEAD ZENER DIODES
VOLTAGE
2.4 to 100 Volts
POWER
500 mWatts
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Molded glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix :” -35” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
3.0
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
s
C
C
O
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage at I
F
= 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
Units
K/mW
V
R
θ
JA
V
F
--
--
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
STAD-FEB.10.2009
1
PAGE . 1
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