BC859W datasheet, PDF - EEWORLD Datasheet

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BC859W: Description100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size80KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC859W Overview

100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

100 mA, 45 V, PNP, 硅, 小信号晶体管

BC859W Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	USM, 3 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	0.1000 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	125
Rated crossover frequency	150 MHz

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BC856AW ~ BC859CW

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE

FEATURES

0.087(2.20)

0.078(2.00)

30/45/65 Volts

CURRENT

200 mWatts

• PNP epitaxial silicon, planar design

• Collector current I

= 100mA

• Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

BC849W Series

• In compliance with EU RoHS 2002/95/EC directives

0.087(2.20)

0.070(1.80)

0.054(1.35)

0.045(1.15)

0.056(1.40)

0.047(1.20)

0.006(0.15)

0.002(0.05)

MECHANICAL DATA

• Case: SOT-323, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.0001 ounce, 0.005 gram

0.016(0.40)

0.008(0.20)

0.004(0.10)MAX.

0.044(1.10)

0.035(0.90)

Device Marking:

BC856AW=56A

BC856BW=56B

BC857AW=57A

BC857BW=57B

BC857CW=57C

BC858AW=58A

BC858BW=58B

BC858CW=58C

BC859BW=59B

BC859CW=59C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector - Emitter Voltage

BC856W

BC857W

BC858W, BC859W

BC856W

BC857W

BC858W, BC859W

BC856W

BC857W

BC858W, BC859W

Symbol

CEO

Value

-65

-45

-30

-80

-50

-30

6.0

-5.0

-100

200

-55 to 150

Units

0.004(0.10)MIN.

• General purpose amplifier applications

Collector - Base Voltage

CBO

Emitter - Base Voltage

Collector Current - Continuous

Max Power Dissipation (Note 1)

Storage Temperature Range

Junction Temperature Range

EBO

TOT

STG

December 17,2010-REV.00

PAGE . 1

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