BAT54A datasheet, PDF - EEWORLD Datasheet

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BAT54A: DescriptionSchottky diodes; CategoryDiscrete semiconductor; File Size355KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BAT54A Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: BAT54A

product features:

Extremely Fast Switching Speed

Product parameters:

Pd power dissipation: 200mW

Io rectified current: 200mA

VR reverse working voltage: 30V

VF forward buck: 1V

IR reverse current: 2uA

Trr forward recovery time: 5ns

Package: SOT-23

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

BAT54/A/C/S

SCHOTTKY BARRIER DIODE

SOT-23

FEATURES

Extremely Fast Switching Speed

BAT54 MARKING:

KL1

BAT54A MARKING:

KL2

BAT54C MARKING:

KL3

BAT54S MARKING:

KL4

Maximum Ratings @Ta=25℃

Parameter

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current

Power Dissipation

Storage Temperature

Symbol

RRM

RWM

STG

200

-55~+150

℃

Limit

Unit

Electrical Characteristics @Ta=25℃

Parameter

Reverse breakdown voltage

Symbol

(BR)

Forward voltage

Reverse current

Diode capacitance

Reverse recovery time

Min

0.24

0.32

0.40

0.50

Typ

Max

Unit

μA

Conditions

=100μA

=0.1mA

=1mA

=10mA

=30mA

=100mA

=25V

=1V,f=1MHz

=10mA

Irr=0.1XI

=100Ω

A,May,2011

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