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B8S-R2_00001

Description
Reverse peak voltage: 800V Average rectified current (Io): 500mA Forward voltage drop (Vf): 1V @ 500mA
CategoryDiscrete semiconductor    Rectifier bridge   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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B8S-R2_00001 Overview

Reverse peak voltage: 800V Average rectified current (Io): 500mA Forward voltage drop (Vf): 1V @ 500mA

B8S-R2_00001 Parametric

Parameter NameAttribute value
Reverse peak voltage800V
Average rectified current (Io)500mA
Forward voltage drop (Vf)1V @ 500mA

B8S-R2_00001 Preview

Download Datasheet
B1S SERIES
MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
0.8 Ampere
CURRENT
VOLTAGE
100 to 1000Volt
Recongnized File # E111753
FEATURES
• Plastic material used carries Underwriters Laboratory recognition 94V-O
• Low leakage
• Ideal for printed circuit board
• Exceeds environmental standards of MIL-S-19500
• Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU
directive)
MECHANICAL DATA
• Case: Reliable low cost construction utilizing molded plastic technique
results in inexpensive product
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: Polarity symbols molded or marking on body
• Weight: 0.0044 ounce, 0.1268 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%
PA R A M ET E R
M a ximum R e c ur r e nt P e a k Re ve r s e Vo lt a g e
M a ximum R M S B r i d g e I np ut Vo l t a g e
M a ximum D C B l o c k i ng Vo l t a g e
M a ximum A ve r a g e F o r w a r d C ur r e nt T
A
= 5 5
O
C
T
A
= 25
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 ms s i ng l e ha l f s i ne - w a ve
s up e r imp o s e d o n r a t e d l o a d
P o w e r D is s ip a t i o n a t T
A
= 2 5
O
C
I
2
t R a t i ng F o r F us i ng ( t < 8 . 3 5 ms )
M a ximum F o r w a r d Vo lt a g e D r o p p e r B r i d g e E le me nt a t 0 . 5 A
M a ximum D C R e ve r s e C ur r e nt a t R a t e d D C
B lo c k i ng Vo lt a g e
Ty p i c a l J unc t i o n Ca p a c i t a nc e ( No t e 1 )
Ty p i c a l T he r ma l R e s is t a nc e
( No t e 2 )
T
J
= 2 5
O
C
T
J
= 1 2 5
O
C
SY M BOL
V
RRM
V
RM S
V
R
I
F ( AV )
I
FS M
P
D
I
2
t
V
F
I
R
C
J
R
θJ
A
R
θJ
L
T
J
, T
STG
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
0.5
0. 8
35
1.4
5. 083
1. 0
5
500
25
85
20
-55 t o + 150
O
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNI T S
V
V
V
A
A
W
A
2
S
V
μA
pF
C / W
O
O p e r a t i ng J unc t i o n a nd S t o r a g e Te mp e r a t ur e R a ng e
C
NOTES :
1. Measured at 1MHz and applied reverse voltage of 4 Volts.
2. Thermal resistance from junction to ambient mounted on 5cmX6cm P.C.B. with minimum copper pads.
December 29,2016-REV.05
PAGE . 1
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