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Datasheet> All Categories > Discrete semiconductor> The transistor> B772O(TO-92)
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B772O(TO-92)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size161KB，2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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B772O(TO-92) Overview

Transistor

B772O(TO-92) Parametric

Parameter NameAttribute value
MakerJCET
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
surface mountNO
Nominal transition frequency (fT)50 MHz

B772O(TO-92) Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
B772
TRANSISTOR（PNP）
TO-92
FEATURES
Power dissipation
: 625
P
CM
m W（Tamb=25℃）
1.
EMITTER
2. COLLECTOR
3.
BASE
1 2 3
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-40
-30
-6
-3
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
h
FE
（
2
）
V
CE
(sat)
V
BE
(sat)
unless
Test
otherwise
MIN
specified）
TYP
MAX
UNIT
V
V
V
-1
-10
-1
μA
μA
μA
conditions
Ic=-100μA
，I
E
=0
I
C
= -10 mA , I
B
=0
I
E
= -100
μA，I
C
=0
V
CB
= -40 V , I
E
=0
V
CE
=-30 V , I
B
=0
V
EB
=-6V ,
I
C
=0
-40
-30
-6
V
CE
= -2V, I
C
= -1A
V
CE
=-2V, I
C
= -100mA
I
C
=-2A,
I
C
=-2A,
I
B
= -0.2A
I
B
= -0.2A
I
C
=-0.1A
60
32
400
-0.5
-1.5
50
V
V
MHz
f
T
V
CE
= -5V,
f =
10MHz
CLASSIFICATION OF
Rank
Range
R
60-120
h
FE(1)
O
100-200
Y
160-320
GR
200-400

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