3DD13005L3DB2 datasheet, PDF - EEWORLD Datasheet

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3DD13005L3DB2: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size887KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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Transistor

3DD13005L3DB2 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Base Number Matches	1

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

3DD13005L3D

TRANSISTOR (NPN)

FEATURES

Power switching applications

Good high temperature

Low saturation voltage

High speed switching

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

TO-126

1. BASE

2. COLLECTOR

3. EMITTER

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

350

200

1.25

150

-55~150

Unit

℃

CIRCUIT:

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

FE(1)

DC current gain

FE(2)

FE(3)

FE(4)

CE(sat)1

Collector-emitter saturation voltage

CE(sat)2

CE(sat)3

Base-emitter saturation voltage

Emitter-Collector forward voltage

Storage time

Transition frequency

BE(sat)1

BE(sat)2

ECF

Test conditions

= 1mA,I

=10mA,I

=1mA,I

=350V,I

=200V,I

=9V,I

=5V, I

=1A

=5V, I

=5mA

=5V, I

=2A

=5V, I

=4A

=1A,I

=0.2A

=2A,I

=0.4A

=4A,I

=1A

=1A,I

=0.25A

=2A,I

=0.5A

=2A

=250mA (UI9600)

=10V, I

=0.5A

2.5

0.8

1.2

1.5

µs

MHz

Min

350

200

100

Typ

Max

Unit

µA

15-20

CLASSIFICATION OF h

FE(1)

Range

10-15

20-25

25-30

30-35

35-40

CLASSIFICATION OF

Rank

Range

2.5-3(µs )

3-3.5(µs

)

3.5-4 (µs )

4-4.5 (µs )

4.5-5 (µs )

A,Dec,2010

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