2SD794A datasheet, PDF - EEWORLD Datasheet

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2SD794A: DescriptionNPN transistor; CategoryDiscrete semiconductor The transistor; File Size2MB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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2SD794A Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: 2SD794A

Product parameters:

Pcm (maximum dissipated power): 1000mW

Ic (collector current): 3000mA

BVcbo (Collector-Base Breakdown Voltage): 70V

BVceo (Collector-Emitter Breakdown Voltage): 60V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 60, Max: 320

VCE (sat) saturation voltage drop: 2V

fT (transition frequency): 60+MHz

Package: TO-126C

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126C Plastic-Encapsulate Transistors

2SD794/794A

FEATURES

High

Voltage

and Large

Current Capacity

Complementary to 2SB744,2SB744A

MAXIMUM RATINGS

=25

℃

unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage 2SD794

2SD794A

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

150

-55 to +150

Unit

℃

TRANSISTOR (NPN)

TO- 126C

1. EMITTER

2. COLLECTOR

3. BASE

ELECTRICAL CHARACTERISTICS (T

=25

℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

DC current gain

FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

CE(sat)

BE(sat)

unless

Test

otherwise

specified

Min

)

Typ

Max

Unit

conditions

100

µA,I

mA,I

2SD794

2SD794A

100

µA,I

V,I

0.5

1.5

A,I

0.15

1.5

A,I

0.15

V,I

100

V,I

=0,f=

MHz

320

µA

MHz

CLASSIFICATION OF

Rank

Range

Marking

FE(2)

60-120

100-200

160-320

A,Jun,2011

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