2SC3330 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC3330

Preview

2SC3330: DescriptionNPN transistor; CategoryDiscrete semiconductor The transistor; File Size112KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet View All

2SC3330 Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: 2SC3330

Product parameters:

Pcm (maximum dissipated power): 300mW

Ic (collector current): 200mA

BVcbo (Collector-Base Breakdown Voltage): 60V

BVceo (Collector-Emitter Breakdown Voltage): 50V

BVebo (emitter-base breakdown voltage): 6V

hFE (current gain): Min: 100, Max: 800

VCE (sat) saturation voltage drop: 0.3V

fT (transition frequency): 200+MHz

Package: TO-92S

2SC3330 Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92S Plastic-Encapsulate Transistors

TO – 92S

2SC3330

TRANSISTOR (NPN)

1. EMITTER

FEATURES

Large Current Capacity and Wide ASO

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

200

300

417

150

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

FE(2)

CE(sat)

BE(sat)

Test

conditions

Min

0.1

100

0.3

200

MHz

800

Typ

Max

Unit

μA

= 10µA,I

=1mA,I

=10µA,I

=40V,I

=5V,I

=6V, I

=1mA

=6V, I

=0.1mA

=100mA,I

=10mA

=100mA,I

=10mA

=6V,I

=0, f=1MHz

=6V,I

=10mA

CLASSIFICATION OF h

FE(1)

RANK

RANGE

100-200

140-280

200-400

280-560

400-800

A,Dec,2010

Recommended Resources

Adopting negative feedback broadband amplifier circuit

Constant voltage driven bridge sensor circuit composed of OP amplifier feedback loop

C523 double column vertical lathe control circuit 02

Infrared transmitter-receiver system circuit with carrier frequency 455kHZ

Sawtooth wave oscillator with adjustable frequency and amplitude

Computer motherboard circuit diagram 815 4_28

DSP IIR digital filter implementation program source code: [size=5]Personally tested effective IIR digital filter C program implementation, the input and output have obvious filtering effects, as shown in the figure[/size] [size=5][/size] [size=5]Appendix (C ...; Aguilera DSP and ARM Processors

Where can I download the device data sheet of Taiwan REALTEK (Realtek)?: I found a Realtek RTS5803 chip. I saw a brief introduction on the official website, but no other information was provided on the page, nor was there a specification sheet. I searched the entire web bu...; littleshrimp Domestic Chip Exchange

NXP Rapid IoT Review] +③ NXP Rapid IoT online compilation and operation of various demos: [size=4] Time flies, and there is not much time left before the end of the evaluation. I have played with the development kit carefully, but I still can't find the clock IC design example I want to de...; yin_wu_qing RF/Wirelessly

iis3dwb three-axis acceleration sensor driver code PCB package: The IIS3DWB is a system-in-package featuring a 3-axis digital accelerometer with low noise over an ultra-wide and flat frequency range. The wide bandwidth, low noise, very stable and repeatable sensit...; littleshrimp MEMS sensors

Pre-registration for the live broadcast with prizes | Rochester Electronics Semiconductor Full Cycle Solutions Help You Deal with Supply Chain Disruptions and Component Outages...: With the continuous innovation of technology, the technological revolution and product iteration of component products have been accelerated, which has shortened the life cycle of component products. ...; EEWORLD社区 Integrated technical exchanges

[Project Source Code] Do you really know how to check the compilation error information of NIOS II C program?: This article and design code were written by FPGA enthusiast Xiao Meige. Without the author's permission, this article is only allowed to be copied and reproduced on online forums, and the original au...; 小梅哥 Altera SoC

Popular Components