2SB1440 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SB1440

Preview

2SB1440: DescriptionPNP transistor; CategoryDiscrete semiconductor The transistor; File Size437KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Environmental Compliance; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet View All

2SB1440 Overview

PNP transistor

Features

Product Name: PNP Transistor

Product model: 2SB1440

Product parameters:

Pcm (maximum dissipated power): 500mW

Ic (collector current): 2000mA

BVcbo (Collector-Base Breakdown Voltage): 50V

BVceo (Collector-Emitter Breakdown Voltage): 50V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 120, Max: 340

VCE (sat) saturation voltage drop: 0.3V

fT (transition frequency): 80+MHz

Package: SOT-89-3L

2SB1440 Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1440

TRANSISTOR (PNP)

SOT-89-3L

BASE

COLLECTOR

EMITTER

FEATURES

Low collector-emitter saturation voltage V

CE(sat)

For low-frequency output amplification

Complementary to 2SD2185

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol Para

CBO

CEO

EBO

stg

meter

Value

-50

-5

-2

500

150

-55~150

Unit

℃

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

FE2

Collector-emitter saturation voltage

Base- emitter saturation voltage

Transition frequency

Collector output capacitance

CE(sat)

BE(sat)

=-2V, I

=-1A

=-1A, I

=-50mA

=-1A, I

=-50mA

=-10V, I

=50mA, f=200MHz

=-10V, I

=0, f=1MHz

-0.3

-1..2

MHz

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE1

Test conditions

=-10μA, I

=-1mA, I

=-10μA, I

=-50V, I

=-5V, I

=-2V, I

=-200mA

120

Min

-50

-5

-1

340

Typ

Max

Unit

μA

CLASSIFICATION OF h

FE1

Rank

Range

Marking

120-240

170-340

A,Jun,2011

Recommended Resources

Active low frequency distortion correction circuit

Heart sound pulse sensor preamplifier circuit diagram

KJZ three-phase fully controlled bridge trigger control circuit

lkHz literary bridge

Computer motherboard circuit diagram 815 4_52

FM transmitter circuit 02

Discussion: How many spacings should be used to drill a GND via in RF high-speed PCB design? [Repost]: Hot discussion: How many spacings are required for GND vias in RF high-speed PCB design?Jianghu boy said: It is for better grounding and to prevent interferenceWhite-robed swordsman says: The "fence" ...; btty038 RF/Wirelessly

5G's new Ultra-high Bands: 5G / UHB FEM Qorvo Enabling 5G/UHB Mobile Connectivity High data rate 5G drives high bandwidth RF5G brings unprecedented bandwidth, some in frequency ranges never before used for cellular communicatio...; btty038 RF/Wirelessly

Switching Power Supply Study Group: [i=s]This post was last edited by 1nnocent on 2020-8-13 18:03[/i]In the book Switching Power Supply Design (3rd Edition),The logical relationship behind this is that the EA output voltage decreases, w...; 1nnocent Switching Power Supply Study Group

Is the Tsinghua virtual student singing a real person AI face replacement? The R&D team responds again!: On October 19, the topic of "Tsinghua University's virtual students suspected of having real-life AI faces replaced" attracted attention online.Some netizens questioned that the "Tsinghua virtual stud...; 赵玉田 Talking

Sand built on gold - Qorvo announces acquisition of Cavendish Kinetics: Eric Creviston, president of Qorvo Mobile Products, said: "The addition of Cavendish Kinetics enables us to establish a market-leading position in antenna tuning . Several of the world's leading smart...; btty038 RF/Wirelessly

Can multiple ADCs simultaneously acquiring a signal improve system performance?: If the sampling speed of one ADC is not fast enough, can we use multiple ADCs to collect the same signal at the same time? If there are two identical ADCs and the time difference between each sampling...; lingking Analog electronics

Popular Components