2N7002（丝印12W） datasheet, PDF

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2N7002（丝印12W）: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 430mA Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 3Ω @ 400mA, 10V Maximum power dissipation (Ta =25°C): 830mW Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size344KB，6 Pages; ManufacturerSHIKUES; Websitehttp://www.shike.tw; Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.

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2N7002（丝印12W） Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 430mA Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 3Ω @ 400mA, 10V Maximum power dissipation (Ta =25°C): 830mW Type: N-channel

2N7002（丝印12W） Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	430mA
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	3Ω @ 400mA,10V
Maximum power dissipation (Ta=25°C)	830mW
type	N channel

2N7002（丝印12W） Preview

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N-Channel Enhancement Mode MOSFET

Channel

Features

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Surface-mounted package

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Extremely low threshold voltage

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Advanced trench cell design

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ESD protected ( HBM > 2KV )

Applications

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Portable appliances

Quick reference

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≧

60 V

Ptot

≦

0.83 W ID

≦

0.43 A

●

RDS(ON)

≦

3 Ω @ VGS = 10 V

●

RDS(ON)

≦

4 Ω @ VGS = 4.5 V

Pin Description

1 Gate(G)

2 Source(S)

3 Drain(D)

Limiting Values

Simplified Outline

Symbol

Notes：* Surface Mounted on 1 in

pad area, t

≤ 10 sec

** Pulse width ≤ 300

s, duty cycle ≤ 2 %

1 of 6

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