2N7002KW datasheet, PDF - EEWORLD Datasheet

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2N7002KW: DescriptionSmall Signal Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size618KB，6 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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2N7002KW Overview

Small Signal Field-Effect Transistor,

2N7002KW Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.34 A
Maximum drain-source on-resistance	2.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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RoHS

2N7002KW

COMPLIANT

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V

60V

● I

340mA

● R

DS(ON)

( at V

=10V)

＜2.5ohm

● R

DS(ON)

( at V

=4.5V)

＜3.0ohm

● ESD Protected Up to 2.5KV (HBM)

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

■

Absolute Maximum Ratings

=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

=25℃ @ Steady State

=70℃ @ Steady State

±20

340

272

1.5

Drain Current

Pulsed Drain Current

Total Power Dissipation @ T

=25℃

350

Thermal Resistance Junction-to-Ambient @ Steady State

θJA

357

℃/

Junction and Storage Temperature Range

STG

-55½+150

℃

■

Ordering Information

(Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY MODE

2N7002KW

72K.

3000

30000

120000

7“ reel

1/6

S-S1964

Rev.2.0,25-Dec-18

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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