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2N7002DW-R2-10001

Description
Transistor
CategoryThe transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2N7002DW-R2-10001 Overview

Transistor

2N7002DW-R2-10001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instruction,
Reach Compliance Codecompliant
Base Number Matches1

2N7002DW-R2-10001 Preview

Download Datasheet
2N7002DW
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=5Ω
0.087(2.20)
0.074(1.90)
SOT-363
Unit
inch(mm)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.010(0.25)
MECHANICALDATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0002 ounces , 0.006grams
• Marking : 702
0.056(1.40)
0.047(1.20)
0.010(0.25)
0.003(0.08)
0. 040(1.00)
0. 031(0.80)
0.012(0.30)
0.005(0.15)
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
, T
S TG
R
θ
J A
Li mi t
60
+20
11 5
800
200
120
-5 5 to + 1 5 0
625
0.044(1.10)
MAX.
U ni t s
V
V
mA
mA
mW
O
T
A
= 2 5
O
C
T
A
= 7 5
O
C
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
R a ng e
M a xi m um P o w e r D i s s i p a t i o n
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.0-AUG.4.2008
0.087(2.20)
0.078(2.00)
• Specially Designed for Battery Operated Systems, Solid-State Relays
0.018(0.45)
0.006(0.15)
• R
DS(ON)
, V
GS
@4.5V,I
DS
@75mA=7.5Ω
PAGE . 1
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