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1U3G

Description
1 A, 200 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1U3G Overview

1 A, 200 V, SILICON, SIGNAL DIODE

1U3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionO-PALF-W2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

1U3G Preview

Download Datasheet
1U1G ~ 1U5G
GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of MIL-S-19500/228.
• Ultra Fast switching for high efficiency.
• In compliance with EU RoHS 2002/95/EC directives
.138(3.5)
50 to 600 Volts
CURRENT
1.0 Amperes
R-1
Unit: inch(mm)
.787(20.0)MIN.
.025(.64)
.021(.53)
MECHANICALDATA
• Case: Molded plastic, R-1
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Band denotes cathode
• Mounting Position: Any
• Weight: 0.0068 ounce, 0.1937 gram
.787(20.0)MIN.
.114(2.9)
.102(2.6)
.087(2.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 2 5
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
C
J
R
θ
J A
t
rr
T
J
, T
S T G
1 U1 G
50
35
50
1 U2 G
100
70
100
1 U3 G
200
140
200
1 .0
30
1 U4 G
400
280
400
1 U5 G
600
420
600
U N IT S
V
V
V
A
A
1 .0
1 .0
150
17
60
50
-5 5 to +1 5 0
1 .3
1 .7
V
µ
A
pF
O
C / W
ns
O
100
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from Junction to lead length 0.375”(9.5mm) P.C.B. mounted.
3. Reverse Recovery Time I
F
=.5A ,I
R
=1A , I
rr
=.25A
STAD-MAR.05.2009
PAGE . 1
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