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10A10GD1

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size469KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
Download Datasheet Parametric View All

10A10GD1 Overview

Rectifier Diode,

10A10GD1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY; LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current2.5 µA
surface mountNO
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

10A10GD1 Preview

Download Datasheet
10A05G THRU 10A10G
General Purpose Rectifier
Features
● High efficiency
● High current capability
● High reliability
● High surge current capability
● Low power loss
● Glass passivated chip junction
● Solder dip 275 °C max. 7 s, per JESD 22-B106
RoHS
COMPLIANT
Mechanical Data
Package: Package:
R-6
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant
Terminals:
Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity:
Color band denotes cathode end
■Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Forward Current
@60Hz sine wave, Resistance load, Ta =50℃
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Ta=25℃
Storage Temperature
Junction Temperature
V
RRM
I
F(AV)
V
A
SYMBOL
UNIT
10A05G
10A05G
50
10A1G
10A1G
100
10A2G
10A2G
200
10A4G
10A4G
400
10.0
10A6G
10A6G
600
10A8G
10A8G
800
10A10G
10A10G
1000
I
FSM
Tstg
Tj
A
300
-55 ~+150
-55~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode
SYMBOL
V
FM
I
RRM1
μA
I
RRM2
Ta=100℃
Measured at 1MHZ
and Applied Reverse
Voltage of 4.0 V.D.C.
50
UNIT
V
TEST CONDITIONS
I
FM
=10.0A
Ta=25℃
10A05G
10A1G
10A2G
10A4G
1.1
2.5
10A6G
10A8G
10A10G
Typical junction capacitance
Cj
pF
60
Thermal Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Thermal Resistance(Typical)
SYMBOL
R
θJ-A
UNIT
℃/W
10A05G
10A1G
10A2G
10A4G
10
10A6G
10A8G
10A10G
1/4
S-A037
Rev.1.3,28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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