1.5KE51 datasheet, PDF - EEWORLD Datasheet

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1.5KE51: Descriptiontransient voltage suppression diode; CategoryDiscrete semiconductor diode; File Size2MB，3 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1.5KE51 Overview

transient voltage suppression diode

Features

Product Name: Transient Voltage Suppressor Diode

Product model: 1.5KE51

product features:

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Exceeds environmental standards of MIL-STD-19500

1500W surge capability at 10 x 100us waveform,duty cycle: 0.01%

Excellent clamping capability

Low zener impedance

Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional

Typical IR less than 1uA above 10V

High temperature soldering guaranteed:2500C/ 10 seconds/.375",(9.5mm) lead length / 5lbs.,(2.3kg) tension

Mechanical data:

Cases: Molded plastic

Lead :Axial leads, solderable per MIL- STD-202, Method 208

Polarity: Color band denotes cathode except Bipolar

Weight: 0.94 gram

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

product data:

Peak Power Dissipation at TA=25℃, TP=1ms PPK Forward power consumption: Minimun 1500W

Steady State Power Dissipation at TL=25℃ PD stable power consumption: 5.0W

Peak Forward Surge Current IFSM Forward pulse current: 200A

Maximum Instaneous Forward Voltage at 25A for Unidirectional Only VF Forward Voltage Drop: 3.5 /5.0V

Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +175℃

Nominal Voltage: 51V

Breakdown Voltage V(BR) Min: 45.9V Max: 56.1V

Test Current at IT Test current: 1.0mA

Stand-Off Voltage Vwm Stand-Off Voltage: 41.3V

Max Reverse Leakage at Vwm ID Maximum reverse leakage current: 5.0uA

Max Peak Pulse Current IPPM Maximum peak pulse current: 21A

Max Clamping Voltage at IPPM VC 最大箝位电压：73.5V

Maximum Temperature Coefficient of VBR: 0.102%/℃

Package: DO-201AD

1.5KE51 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	compliant
Breakdown voltage nominal value	51 V
Maximum clamping voltage	73.5 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 code	e3
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	41.3 V
surface mount	NO
Terminal surface	Tin (Sn)

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