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AT28HC256-70JU

Description
EEPROM memory IC 256Kb (32K x 8) Parallel 70 ns 32-PLCC (13.97x11.43)
Categorysemiconductor    memory   
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

AT28HC256-70JU Overview

Microchip AT28HC256 is a high-performance 256Kbit parallel EEPROM, available in industrial and military temperature ranges, providing access times of up to 70ns and power dissipation of 440mW. When deselected, CMOS standby current is less than 5mA. Like static RAM, it can be read or written without external components and contains a 64-byte page register that can write up to 64 bytes simultaneously. Military models feature internal error correction circuitry for increased durability and data retention. Optional software data protection prevents accidental writes, and an additional 64-byte EEPROM enables device identification or tracking. Other Features: 32 Kbits x 8 (256 Kbit) 5V ± 10% Power Supply Parallel Interface 150ns Access Times Self-timed Erase and Write Cycles (10 ms max) Page Write and Byte Write End of Write Detection Data Round Inquire about low power consumption: Read/write current 40 mA (max) Standby current TTL 2 mA (max), CMOS 200 μA (max)

AT28HC256-70JU Parametric

Parameter NameAttribute value
categorysemiconductor;memory
MakerMicrochip
series-
PackagePipe fittings
memory typenon-volatile
memory formatEEPROM
technologyEEPROM
storage256Kb
memory organization32K x 8
memory interfacein parallel
Write cycle time - words, pages10ms
interview time70 ns
Voltage - Power supply4.5V ~ 5.5V
Operating temperature-40°C ~ 85°C(TC)
Installation typesurface mount type
Package/casing32-LCC (J-lead)
Supplier device packaging32-PLCC(13.97x11.43)
Basic product numberAT28HC256

AT28HC256-70JU Preview

Download Datasheet
AT28HC256
Military Grade 256-Kbit (32,768 x 8) High-Speed
Paged Parallel EEPROM
Features
Fast Read Access Time: 90 ns
Automatic Page Write Operation:
– Internally organized as 32,768 x 8 (256K)
– Internal address and data latches for 64 bytes
– Internal control timer
Fast Write Cycle Time:
– Page Write cycle time: 3 ms or 10 ms maximum
– 1 to 64-byte Page Write operation
Low-Power Dissipation:
– 80 mA active current
– 3 mA CMOS standby current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology:
– Endurance: 10,000 or 100,000 cycles
– Data retention: 10 years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
®
JEDEC Approved Byte-Wide Pinout
Full Military Temperature Range
Packages
32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC and 30-Pin PGA
©
2020 Microchip Technology Inc.
Datasheet
DS20006352A-page 1

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