Full-bridge driver UBA2030T and its applications

1 Introduction UBA2030T, manufactured by Philips using the "BCD750 power logic process method", is a high-voltage IC specially designed to drive power MOSFETs in a full-bridge topology. UBA2030T only requires a small number of external components to form a high-intensity discharge (HID) lamp electronic ballast circuit, and provides a solution for the design of HID lamp drive circuits. 2 Package, internal structure and pin function UBA2030T adopts 24-pin SO package. The top view is shown in Figure 1. The UBA2030T chip integrates circuits such as bootstrap diodes, oscillators, high-voltage and low-voltage level phase shifters, high-end (left and right) and low-end (left and right) drivers and control logic. Its internal structural block diagram is shown in Figure 2. Table 1 lists the pin functions of UBA2030T. 2 Main parameters and features 2.1 Main parameters The main parameters and reference data of UBA2030T are listed in Table 2. 2.2 Main features Figure 1 Top view of SO24 package The main features of UBA2030T are as follows: Built-in bootstrap diode, used to drive the full-bridge circuit to reduce external components to a minimum; High-voltage input up to 570V, to drive the internal circuit and full-bridge Figure 2 Inside of UBA2030T Structural block diagram 1 Pin function Pin number symbol Function description 1 GLR Gate driver output of the low-side right MOSFET 2 PGND Source power ground of the low-side left and right MOSFET 3 GLL Gate driver output of the low-side left MOSFET 4,6 ,9,16,17,19 nc Not connected 5 RC Internal oscillator RC input 7 BE Control input enable 8 BER Bridge reference input enable 10 FSL Floating supply voltage left output 11 GHL High side left MOSFET gate driver output 12 SHL High Side Left MOSFET Source 13 SHR High Side Right MOSFET Source 14 GHR High Side Right MOSFET Gate Driver Output 15 FSR Floating Supply Voltage Right Output 18 HV High Voltage Power Input 20 EXO External Oscillator Input 21 SD Shutdown Input 22 DTC Dead Time Control input 23 VDD Internal (low voltage) power supply 24 SGND Signal ground surface 2 Main parameters and reference data symbols Parameter conditions Minimum value Typical value Maximum value Unit High voltage VHV High voltage power supply (voltage) 0 - 570 V Start (applied via pin HV) Istrtu Start current - 0.7 1.0 mA Vth(osc,strt) Starting oscillation threshold voltage at fbridge=500Hz, no load 14.0 15.5 17.0 V Vth(osc,strt) Stop oscillation threshold voltage at fbridge=500Hz, no load 11.5 13.0 14.5 V Output driver Io(source) Output source current VDD=VFSL=VFSR=15VVGHR=VGHL=VGLR=VGLL=0V 140 190 240 mA Io(sink) Output sink current VDD=VFSL=VFSR=15VVGHR=VGHL=VGLR=VGLL=15V 200 260 320 mA Internal oscillator fbridge Bridge oscillator frequency EXQ pin connected to SGND 50 - 50000 Hz External oscillator fosc(ext) External oscillator frequency RC pin connected to SGND fbridge=fosc(ext)/2 100 - 100000 Hz Dead time tdead Dead time control range (externally adjustable) 0.4 - 4 μs Bridge enable IIH High level input current enable activation 100 - 700 μA IIL Low level input current enable blocked 0 - 20 μA Close VIH high level Input voltage shutdown activation: 1ΔVSD/Δt1>5V/ms 4.5 - VDD V VIL Low level input voltage shutdown blocking: 1ΔVSD/Δt1>5V/ms 0 - 0.5 V II (SD) Input current 0 - 50 μA VDD range : MOSFET in 0V~18V, IC provides its own low power supply voltage; Use the resistor RDT connected between the DTC pin and the SGND pin to set the dead time tdead, and RDT=270tdead-70, RDT(min) =50kΩ, RDT(max)=1MΩ (when the unit of RDT is kΩ, the unit of tdead is μs); The oscillator frequency is adjustable. When using the internal oscillator, the bridge frequency can be adjusted by using the external resistor ROSC and Capacitor COSC setting: fbridge