2x80WHI-FI power amplifier 01

As we all know, the current use of VMOS FET power tubes in foreign countries can produce high-power amplifiers that are close to the reproduction effect of electronic tubes
, and the heat generation and power consumption are better than those of electronic tubes. 9. The differential amplifier composed of VMOS tubes at the front input end also reduces the input
impedance. It is very high, its driving current is only 0. lvA, and its on-resistance is small, its operating frequency is high, its dynamic range is large, and it is not easy to saturate. 6
    Technical indicators:
    (】) Rated power: 80w×2 (phoenix=8n);
    (2 ) Frequency response: 4 Hz～100kHz (±0.5dB)}
    (3) Harmonic distortion: 0.018 (3:2Hz～20kHz);
    (4) Signal-to-noise ratio: >89dB (input terminal connected to 600fl resistor);
    (5 )Input sensitivity: 380m V.
    The output power is completely determined by the power of the final field effect transistor. The purpose is: IRF9130 and IRF150 are complementary; the power supply voltage
is ±42V, provided by a dedicated switching power supply for the power amplifier.