Semiconductor diodes and their applications test questions

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Semiconductor diodes and their applications test questions [Copy link]

Conductor diode and its application

1. The free electron concentration in an intrinsic semiconductor is ______ the hole concentration Greater than Less than Equal to 2. In doped semiconductors, the concentration of majority carriers depends mainly on ______ Temperature Material Doping process Doping concentration 3. In doped semiconductors, the concentration of minority carriers is greatly affected by ______ Temperature Doping process Doping concentration 4. In a doped semiconductor, the higher the concentration of majority carriers, the higher the concentration of minority carriers. High Low Unchanged 5.N-type semiconductor______ Positively charged Negatively charged Neutral 6. As the temperature rises, the resistivity of an N-type semiconductor will ______ Increase Decrease No change 7. When the PN junction is forward biased, the depletion layer will ______ No change Wider than Narrower 8. When the ambient temperature rises, the forward voltage of the diode will Increase Decrease No change 9. When the ambient temperature rises, the dead voltage of the diode will ______ Increase Decrease No change 10. When the ambient temperature rises, the reverse saturation current of the diode will ______ Increase Decrease No change 11. The forward voltage drop of a diode generally has a ______ temperature coefficient Positive Negative Zero 12. The two main parameters to ensure the safe operation of the diode are ______ and ______ U D , I F I F , I S I F , U R 13. The main performance indicators of an ideal diode are ______ U D =0, I R =0, U D =0.3V, I R =0 U D =0.5V, I R = I S 13. Zener diodes usually work in ______ to stabilize the DC output voltage Cut-off region Forward conduction region Reverse breakdown region 12. For a voltage regulator with a stable voltage of 10V, when the ambient temperature rises, its stable voltage will ______ Increase Decrease No change 13. The reverse bias voltage of a diode increases, and its junction capacitance ______ Increase Decrease No change 17. When a diode is forward biased, its junction capacitance is mainly ______ Barrier capacitance Diffusion capacitance Cannot be determined 18.The dead zone voltage of a germanium diode is approximately ______ 0.1V 0.2V 0.3V 19. The voltage drop of a silicon diode after it is fully turned on is approximately ______ 0.3V 0.5V 0.7V 20. From the volt-ampere characteristics of a diode, we know that the higher the voltage drop of a diode, the greater the resistance of the diode. Size Unchanged 21. The volt-ampere characteristic of a diode can be expressed as ______ 22. Given the static operating points UD and ID of a diode , the static resistance of the diode is ______ U D / I D U T / I D U D / I S 23. Given the static operating points UD and ID of a diode , the dynamic resistance of the diode is ______ 24. When the forward voltage of a silicon diode is UD = 0.6V, the forward current ID = 10mA. If UD increases to 0.66V, the current ID is approximately ______ 11mA 20mA 100mA 25 In the circuit shown in the figure, it is known that when the power supply voltage E=4V, I=1mA. Then when the power supply voltage E=8V, the magnitude of the current I will be______ I =1mA I <1mA I >1mA 26. In the circuit shown in the previous question, if E=8V, when the temperature is 10℃, the diode voltage drop is UD = 0.7V. When the temperature rises to 40℃, the value of UD is______ U D =0.7V U D <0.7V U D >0.7V

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