Infineon's LDMOS process increases RF transistor power density by 25%

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Infineon's LDMOS process increases RF transistor power density by 25% [Copy link]

Infineon Technologies recently demonstrated the next-generation LDMOS (laterally diffused metal oxide semiconductor) process at the MTT International Microwave Symposium. The process can be used to manufacture high-power RF (radio frequency) transistors for products such as power amplifiers for wireless network base stations and repeaters. Infineon Technologies recently demonstrated the next-generation LDMOS (laterally diffused metal oxide semiconductor) process at the MTT International Microwave Symposium. The process can be used to manufacture high-power RF (radio frequency) transistors for products such as power amplifiers for wireless network base stations and repeaters.

It is reported that the operating frequency of the equipment manufactured by this process can meet the requirements of high-speed wireless access networks, and the power density is 25% higher than that of the equipment produced by Infineon's existing process. In addition, the new plastic packaging technology used with LDMOS can reduce the overall cost of the system. This solution can enable wireless network system developers to reduce costs, improve system performance, and enhance system quality and reliability. Helmut Vogler, Vice President and General Manager of RF Power Products of Infineon, pointed out, "Our latest LDMOS process can significantly improve the performance of the latest MCPA (multi-carrier power amplifier) and digital pre-distortion systems."

The new process enables transistors to operate at frequencies up to 3.8 GHz, which is within the wireless access bands specified by WiWAX (Worldwide Interoperability for Microwave Access) and IEEE 802.16, and significantly higher than transistors produced using the previous generation process (2.7 GHz). Power density (i.e., the amount of power that can be generated per unit area of silicon) has also increased by 25%, which has created conditions for integrating high-power devices in smaller packages, thereby reducing the area required for printed circuit boards in power amplifier systems. In addition to increasing gain, this process can also improve the efficiency of linear amplifiers in the back-off mode of operation by 3 percentage points compared to existing products, which not only reduces the number of components required, but also reduces the power consumption of components, thereby reducing the cooling requirements of cellular base stations. Infineon announced that transistors manufactured using the new process will be packaged in low-gold-copper plastic open packages, which not only reduces the overall system cost, but also improves the system's thermal and RF performance.

The first products made using this process are expected to be available in late 2006. These products will enable designers to create smaller, more efficient power amplifiers that meet the requirements of mobile network operators as they prepare to install new base stations to support advanced communications services.