Semiconductor diode parameter symbols and their meanings

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Semiconductor diode parameter symbols and their meanings [Copy link]

CT--- Barrier Capacitance

Cj--- junction (inter-electrode) capacitance, which indicates the total capacitance of the germanium detector diode under the specified bias voltage at both ends of the diode.

Cjv--- Bias junction capacitance

Co--- Zero bias capacitor

Cjo--- zero bias junction capacitance

Cjo/Cjn--- Junction capacitance change

Cs--- Case capacitance or package capacitance

Ct--- Total capacitance

CTV--- voltage temperature coefficient. The ratio of the relative change of the stable voltage to the absolute change of the ambient temperature under the test current.

CTC--- Capacitance Temperature Coefficient

Cvn--- Nominal capacitance

IF--- Forward DC current (forward test current). The current passing through the interelectrode of a germanium detector diode under a specified forward voltage VF ; the maximum operating current (average value) allowed to continuously pass through a silicon rectifier tube or silicon stack in a sinusoidal half-wave under specified conditions of use; the maximum forward DC current allowed to pass through a silicon switching diode at rated power; the current given when measuring the forward electrical parameters of a voltage regulator diode

IF ( AV ) --- Forward average current

IFM ( IM ) --- Forward peak current (maximum forward current). The maximum forward pulse current allowed to pass through the diode at rated power. Limiting current of light-emitting diodes.

IH--- constant current, maintaining current.

Ii--- light emitting diode starting current

IFRM--- Forward repetitive peak current

IFSM--- Forward non-repetitive peak current (surge current)

Io--- rectified current. The working current passing through a specific circuit under specified frequency and specified voltage conditions.

IF(ov)--- Forward overload current

IL--- Photocurrent or current-stabilizing diode limiting current

ID--- Dark Current

IB2--- Base modulation current in unijunction transistor

IEM--- Emitter peak current

IEB10--- Reverse current between emitter and first base in double base unijunction transistor

IEB20--- Emitter-to-Emitter Current in a Dual-Base Unijunction Transistor

ICM--- Maximum output average current

IFMP--- Forward Current Pulse

IP--- peak current

IV--- Valley Current

IGT--- thyristor control electrode trigger current

IGD--- Thyristor control pole does not trigger current

IGFM--- Control electrode forward peak current

IR ( AV ) --- Reverse average current

IR ( In ) --- Reverse DC current (reverse leakage current). When measuring reverse characteristics, the given reverse current; the current passing through the silicon stack when a reverse voltage of a specified value is applied in a half-sine wave resistive load circuit; the current passing through the two ends of the silicon switching diode when a reverse working voltage VR is applied; the leakage current generated by the Zener diode under reverse voltage; the leakage current of the rectifier tube under the highest reverse working voltage of the half-sine wave.

IRM--- Reverse peak current

IRR--- Thyristor reverse repetitive average current

IDR--- Thyristor off-state average repetitive current

IRRM--- Reverse repetitive peak current

IRSM--- Reverse non-repetitive peak current (reverse surge current)

Irp--- Reverse recovery current

Iz--- Stable voltage and current (reverse test current). When testing reverse electrical parameters, the given reverse current

Izk--- Zener diode knee current

IOM--- Maximum forward (rectified) current. Under specified conditions, the maximum instantaneous forward current that can be sustained; the maximum operating current that is allowed to continuously pass through the germanium detector diode in a half-wave sine rectifier circuit with a resistive load

IZSM--- Zener diode surge current

IZM--- Maximum voltage regulator current. The current that the voltage regulator diode is allowed to pass under the maximum power dissipation

iF--- Total instantaneous forward current

iR--- total instantaneous reverse current

ir--- reverse recovery current

Iop--- operating current

Is--- stabilized current of the stabilizing diode

f--- frequency

n--- capacitance change index; capacitance ratio

Q--- Quality Factor

δ vz--- Zener voltage drift

di/dt--- Critical rate of rise of on-state current

dv/dt--- Critical rate of rise of on-state voltage

PB--- Pulse burnout power

PFT ( AV ) --- Forward conduction average power dissipation

PFTM--- Forward peak power dissipation

PFT--- Forward conduction total instantaneous power dissipation

Pd--- dissipated power

PG--- gate average power

PGM--- Peak Gate Power

PC--- control electrode average power or collector dissipation power

Pi--- Input power

PK--- Maximum switching power

PM--- rated power. The maximum power that a silicon diode can withstand when the junction temperature is not higher than 150 degrees

PMP--- Maximum leakage pulse power

PMS--- Maximum pulse power

Po--- output power

PR--- Reverse surge power

Ptot--- Total dissipated power

Pomax--- maximum output power

Psc--- continuous output power

PSM--- Non-repetitive surge power

PZM--- Maximum dissipated power. Under given operating conditions, the maximum power that the Zener diode is allowed to withstand

RF ( r ) --- Forward differential resistance. When the current increases with the voltage exponentially during forward conduction, it shows obvious nonlinear characteristics. Under a certain forward voltage, the voltage increases by a small amount △ V , and the forward current increases by △ I accordingly . Then △ V/ △ I is called differential resistance.

RBB--- base resistance of double base transistor

RE--- RF resistor

RL--- load resistance

Rs (rs) ---- series resistance

Rth---- Thermal resistance

R(th)ja---- Thermal resistance from junction to ambient

Rz(ru)--- dynamic resistance

R(th)jc--- Thermal resistance from junction to case

r δ --- Attenuation resistance

r(th)--- transient resistance

Ta--- ambient temperature

Tc--- shell temperature

td--- delay time

tf--- fall time

tfr--- Forward recovery time

tg--- circuit commutation shut-off time

tgt--- gate control gate opening time

Tj--- junction temperature

Tjm--- maximum junction temperature

ton--- Opening time

toff--- off time

tr--- Rise time

trr--- reverse recovery time

ts--- storage time

tstg--- Storage temperature of temperature compensation diode

a--- temperature coefficient

λ p--- peak wavelength of luminescence

△ λ --- Spectral half width

η --- voltage division ratio or efficiency of a single junction transistor

VB--- Reverse peak breakdown voltage

Vc--- rectified input voltage

VB2B1--- base voltage

VBE10--- Reverse voltage between emitter and first base

VEB--- saturation voltage drop

VFM--- Maximum forward voltage drop (forward peak voltage)

VF--- Forward voltage drop (forward DC voltage)

△ VF--- Forward voltage drop difference

VDRM --- Off-state repetitive peak voltage

VGT--- gate trigger voltage

VGD--- gate non-trigger voltage

VGFM--- gate forward peak voltage

VGRM--- gate reverse peak voltage

VF ( AV ) --- Average forward voltage

Vo--- AC input voltage

VOM--- Maximum output average voltage

Vop--- operating voltage

Vn--- center voltage

Vp--- peak voltage

VR--- Reverse working voltage (reverse DC voltage)

VRM--- Reverse peak voltage (maximum test voltage)

V ( BR ) --- Breakdown voltage

Vth--- Valve voltage (threshold voltage)

VRRM--- Reverse repetitive peak voltage (reverse surge voltage)

VRWM--- Reverse working peak voltage

V v--- valley voltage

Vz--- stable voltage

△ Vz--- voltage increment in the voltage regulation range

Vs--- pass voltage (signal voltage) or current-stabilizing voltage of the current-stabilizing tube

av--- voltage temperature coefficient

Vk--- knee voltage (current stabilizing diode)

VL --- Limiting voltage