According to foreign media reports, Innoscience Technology announced the expansion of its product portfolio and launched two 100V automotive-grade GaN devices to speed up the switching speed of LiDAR sensors. Its INN100W135A-Q has an RDS(on) of 13.5 mΩ, while the smaller package INN100W800A-Q has an RDS(on) of 80 mΩ, both of which are AEC-Q101 certified. In addition to LiDAR sensors, these devices are also suitable for high-power density DC-DC converters and Class D audio applications in the automotive field.
Image source: Innoscience
The two devices have significant advantages in size and power efficiency, with the INN100W135A-Q and INN100W800A-Q using 2.13mm x 1.63mm and 0.9mm x 0.9mm WLCSP packages respectively. Both devices are specifically tailored for the requirements of L2+/L3 level assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of silicon devices.
Parameters such as Qg and Qoss are also improved by 1.5 to 3 times compared with silicon devices. This enables it to have a medium and long-range recognition capability of 200/300m, which is crucial for advanced driver assistance and autonomous driving applications.
Denis Marcon, General Manager of Innoscience Europe, said: “Both devices are designed to meet the growing demand for efficiency and precision in driver assistance and autonomous driving technologies – GaN devices are rapidly replacing traditional silicon in key automotive applications due to their superior performance. In LiDAR applications, GaN is well known for its ability to achieve higher resolution and greater detection range while reducing power loss and temperature rise, which traditional silicon technology cannot match.”
This batch of automotive-grade GaN products has now entered mass production and is completing batch orders to meet demand.
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