STMicroelectronics launches 1200V withstand voltage power components to improve photovoltaic inverter efficiency

On December 1, STMicroelectronics released a new 1200V insulated gate bipolar transistor (IGBT) for photovoltaic power inverters (PCS).

The appearance of the new 1200V insulated gate bipolar transistor package.

In order to further reduce the on-state voltage and switch loss, the IGBT has improved the trench gate field termination structure, which can greatly improve the robustness and conversion efficiency of the inverter.

By optimizing the on- and off-characteristics and reducing the off-loss on the switch side, it has become the most suitable insulated gate bipolar transistor for hard switching circuits (switches that can directly cut off and conduct DC power). By minimizing the overpotential when cutting off the circuit and eliminating oscillation, it can not only reduce power loss but also simplify circuit design.

The operating temperature range is higher than that of existing products, up to 175°C. The short-circuit withstand time is 10 microseconds (μs: one millionth of a second) when operating at 150°C.

Currently, the product has started mass production, and three varieties including the 40A "STGW40M120DF3" use TO-247 packaging, and three varieties including the "STGWA40M120DF3" use long lead TO-247 packaging. The unit price of STGW15M120DF3 is about US$2.80 when buying in batches of 1,000.