Transphorm launches top-cooled TOLT packaged FET devices to help computing, artificial intelligence, energy and automotive power systems

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Transphorm launches top-cooled TOLT packaged FET devices to enable superior thermal and electrical performance in computing, artificial intelligence, energy and automotive power systems


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The newly launched device is the industry’s first TOLT gallium nitride transistor with top cooling, expanding Transphorm’s diverse product packaging portfolio


Goleta, California – November 29, 2023 – Transphorm, Inc., a leading global supplier of gallium nitride (GaN) power semiconductors that represents the future of next-generation power systems, recently announced the launch of a new SuperGaN in TOLT packaging. ® FET. The new product TP65H070G4RS transistor has an on-resistance of 72 milliohms and is the industry's first top-heat-dissipation surface-mount gallium nitride device in a JEDEC standard (MO-332) TOLT package. For systems that are not suitable for traditional bottom-cooled surface-mount devices, TOLT packaging provides customers with a more flexible thermal management solution. The TOLT package not only has thermal performance comparable to the widely used, thermally stable TO-247 jack package, but also has the additional advantage of an efficient manufacturing process using SMD-based printed circuit board assembly (PCBA).


TP65H070G4RS uses Transphorm's powerful high-performance 650 V normally-off d-mode GaN platform, which has lower gate charge, output capacitance, crossover loss, reverse recovery charge and dynamic resistance, resulting in better efficiency than silicon , silicon carbide and other gallium nitride products. The advantages of the SuperGaN platform combined with the better thermal dissipation and system assembly flexibility of TOLT packaging provide customers seeking to launch power systems with higher power density and efficiency and lower overall power system cost, providing a high-performance, high-reliability solution. GaN solutions.


Transphorm is working with multiple high-power GaN partners around the world, including leading customers in server and storage power, global leaders in energy/microinverters, manufacturers of innovative off-grid power solutions, and satellite communications of leading companies. 


Philip Zuk, senior vice president of business development and marketing at Transphorm, said: "Surface mount devices like TOLL and TOLT offer many advantages, including lower internal inductance and easier board mounting during manufacturing. TOLT provides this by using top-side heat dissipation More flexible overall thermal management with socket-like thermal performance. These devices are typically used in mid- to high-power system applications. Key market segments include high-performance computing (servers, telecom, AI power supplies), renewable energy and industrial, and electric vehicles. Some of these market applications already use Transphorm’s gallium nitride technology. We are very excited to help customers realize additional system-level advantages with TOLT SuperGaN solutions.”


Following the recent launch of three new TOLL FETs, Transphorm released this new TOLT FET product, further enriching Transphorm's product line and demonstrating that the Transphorm SuperGaN platform uses different packaging forms of device "gallium" to control full power to support customer applications. promise.


Device Specifications


SuperGaN devices lead the market with their unparalleled performance advantages:


 Reliability: FIT failure rate is less than 0.05

 Gate safety margin: ± 20 V 

 Immunity: 4 V

 The temperature coefficient of resistance (TCR) is 20% lower than that of e-mode normally closed gallium nitride devices

 Driver flexibility (standard commercially available silicon device drivers can be used) 


The 650 V SuperGaN TOLT packaged device is robust and reliable and has been certified to JEDEC standards. Since the normally-off d-mode platform combines GaN HEMT with an integrated low-voltage silicon MOSFET, SuperGaN FET can be driven using commonly available commercial gate drivers and applied to various hard-switching and soft-switching AC-DC, Increase power density and reduce system size, weight and cost in DC-DC and DC-AC topologies.


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Ordering and support resources


Samples of the TP65H070G4RS SuperGaN TOLT package device are available now.


Keywords:Transphorm Reference address:Transphorm launches top-cooled TOLT packaged FET devices to help computing, artificial intelligence, energy and automotive power systems

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