Transphorm launches top-cooled TOLT packaged FET devices to enable superior thermal and electrical performance in computing, artificial intelligence, energy and automotive power systems
The newly launched device is the industry’s first TOLT gallium nitride transistor with top cooling, expanding Transphorm’s diverse product packaging portfolio
Goleta, California – November 29, 2023 – Transphorm, Inc., a leading global supplier of gallium nitride (GaN) power semiconductors that represents the future of next-generation power systems, recently announced the launch of a new SuperGaN in TOLT packaging. ® FET. The new product TP65H070G4RS transistor has an on-resistance of 72 milliohms and is the industry's first top-heat-dissipation surface-mount gallium nitride device in a JEDEC standard (MO-332) TOLT package. For systems that are not suitable for traditional bottom-cooled surface-mount devices, TOLT packaging provides customers with a more flexible thermal management solution. The TOLT package not only has thermal performance comparable to the widely used, thermally stable TO-247 jack package, but also has the additional advantage of an efficient manufacturing process using SMD-based printed circuit board assembly (PCBA).
TP65H070G4RS uses Transphorm's powerful high-performance 650 V normally-off d-mode GaN platform, which has lower gate charge, output capacitance, crossover loss, reverse recovery charge and dynamic resistance, resulting in better efficiency than silicon , silicon carbide and other gallium nitride products. The advantages of the SuperGaN platform combined with the better thermal dissipation and system assembly flexibility of TOLT packaging provide customers seeking to launch power systems with higher power density and efficiency and lower overall power system cost, providing a high-performance, high-reliability solution. GaN solutions.
Transphorm is working with multiple high-power GaN partners around the world, including leading customers in server and storage power, global leaders in energy/microinverters, manufacturers of innovative off-grid power solutions, and satellite communications of leading companies.
Philip Zuk, senior vice president of business development and marketing at Transphorm, said: "Surface mount devices like TOLL and TOLT offer many advantages, including lower internal inductance and easier board mounting during manufacturing. TOLT provides this by using top-side heat dissipation More flexible overall thermal management with socket-like thermal performance. These devices are typically used in mid- to high-power system applications. Key market segments include high-performance computing (servers, telecom, AI power supplies), renewable energy and industrial, and electric vehicles. Some of these market applications already use Transphorm’s gallium nitride technology. We are very excited to help customers realize additional system-level advantages with TOLT SuperGaN solutions.”
Following the recent launch of three new TOLL FETs, Transphorm released this new TOLT FET product, further enriching Transphorm's product line and demonstrating that the Transphorm SuperGaN platform uses different packaging forms of device "gallium" to control full power to support customer applications. promise.
Device Specifications
SuperGaN devices lead the market with their unparalleled performance advantages:
Reliability: FIT failure rate is less than 0.05
Gate safety margin: ± 20 V
Immunity: 4 V
The temperature coefficient of resistance (TCR) is 20% lower than that of e-mode normally closed gallium nitride devices
Driver flexibility (standard commercially available silicon device drivers can be used)
The 650 V SuperGaN TOLT packaged device is robust and reliable and has been certified to JEDEC standards. Since the normally-off d-mode platform combines GaN HEMT with an integrated low-voltage silicon MOSFET, SuperGaN FET can be driven using commonly available commercial gate drivers and applied to various hard-switching and soft-switching AC-DC, Increase power density and reduce system size, weight and cost in DC-DC and DC-AC topologies.
Ordering and support resources
Samples of the TP65H070G4RS SuperGaN TOLT package device are available now.
Previous article:Littelfuse Launches FDA117 Optically Isolating Photovoltaic Driver
Next article:Magnet design of giant magnetoresistive multi-turn position sensor
Recommended ReadingLatest update time:2024-11-16 09:40
- Popular Resources
- Popular amplifiers
- MathWorks and NXP Collaborate to Launch Model-Based Design Toolbox for Battery Management Systems
- STMicroelectronics' advanced galvanically isolated gate driver STGAP3S provides flexible protection for IGBTs and SiC MOSFETs
- New diaphragm-free solid-state lithium battery technology is launched: the distance between the positive and negative electrodes is less than 0.000001 meters
- [“Source” Observe the Autumn Series] Application and testing of the next generation of semiconductor gallium oxide device photodetectors
- 采用自主设计封装,绝缘电阻显著提高!ROHM开发出更高电压xEV系统的SiC肖特基势垒二极管
- Will GaN replace SiC? PI's disruptive 1700V InnoMux2 is here to demonstrate
- From Isolation to the Third and a Half Generation: Understanding Naxinwei's Gate Driver IC in One Article
- The appeal of 48 V technology: importance, benefits and key factors in system-level applications
- Important breakthrough in recycling of used lithium-ion batteries
- Innolux's intelligent steer-by-wire solution makes cars smarter and safer
- 8051 MCU - Parity Check
- How to efficiently balance the sensitivity of tactile sensing interfaces
- What should I do if the servo motor shakes? What causes the servo motor to shake quickly?
- 【Brushless Motor】Analysis of three-phase BLDC motor and sharing of two popular development boards
- Midea Industrial Technology's subsidiaries Clou Electronics and Hekang New Energy jointly appeared at the Munich Battery Energy Storage Exhibition and Solar Energy Exhibition
- Guoxin Sichen | Application of ferroelectric memory PB85RS2MC in power battery management, with a capacity of 2M
- Analysis of common faults of frequency converter
- In a head-on competition with Qualcomm, what kind of cockpit products has Intel come up with?
- Dalian Rongke's all-vanadium liquid flow battery energy storage equipment industrialization project has entered the sprint stage before production
- Allegro MicroSystems Introduces Advanced Magnetic and Inductive Position Sensing Solutions at Electronica 2024
- Car key in the left hand, liveness detection radar in the right hand, UWB is imperative for cars!
- After a decade of rapid development, domestic CIS has entered the market
- Aegis Dagger Battery + Thor EM-i Super Hybrid, Geely New Energy has thrown out two "king bombs"
- A brief discussion on functional safety - fault, error, and failure
- In the smart car 2.0 cycle, these core industry chains are facing major opportunities!
- The United States and Japan are developing new batteries. CATL faces challenges? How should China's new energy battery industry respond?
- Murata launches high-precision 6-axis inertial sensor for automobiles
- Ford patents pre-charge alarm to help save costs and respond to emergencies
- New real-time microcontroller system from Texas Instruments enables smarter processing in automotive and industrial applications
- CC26xx BLE adds characteristic value of indication attribute
- Answer the questions to win prizes | Shijian Exploration: Smoke detection empowers smart buildings
- Todd Gillenwater talks about why he is optimistic about UWB technology
- Embedded Linux boutique resources, with source code comments
- Does anyone have the component library and PCB package library of POWER PCB 5.0? Please share
- Looking to buy C8051F video?
- Free review: HuaDa M4 core HC32F460 board, #all serial communication ports, GPIO can be freely mapped# Is it fresh?
- Playing with Zynq Serial 13 - Using GIT for project backup and version management 5
- IGBT drive circuit
- Comparison of 4G and 5G wireless technology details