1 Introduction
There have been many studies on the volt-ampere characteristics of zinc oxide varistors under 8/20μS pulse current [1-4] . It is generally believed that: under 8/20μS pulse current, the current peak and voltage peak of the varistor do not arrive at the same time, the voltage peak is earlier than the current peak, the volt-ampere characteristic curve of the rising edge and the volt-ampere characteristic curve of the falling edge do not overlap and form a loop feature; some believe that it is the hole hysteresis effect excited by the pulse current [3] , some believe that it is the hysteresis effect caused by electrostriction or thermal effect [4] , and some believe that it is affected by the impact current and the current change rate [2] .
The loop characteristics are naturally associated with the inductance effect. Although various methods have been used in previous tests to reduce or eliminate the inductance of the varistor in the 8/20μS pulse current test, the volt-ampere characteristic loop characteristics of the varistor cannot be eliminated. Is this because the inductance cannot be eliminated or is the loop characteristic an intrinsic characteristic of the varistor ceramic body?
In fact, because it is impossible to use zero lead for varistor ceramics, reducing the lead length, using hollow valve plates and Kevin wiring method can only reduce the inductance as much as possible. The inductance cannot be completely eliminated during the impact measurement of the varistor. Even if the current is passed into the surface electrode of the varistor ceramic body using a zero-length lead, the current must be redistributed to each point on the surface electrode, and the current channel of the surface electrode constitutes the equivalent inductance. The equivalent inductance of the varistor electrode and the lead inductance between the test points together constitute the lead-out inductance of the varistor. The lead-out inductance cannot be eliminated. The lead-out inductance definitely contributes to the loop characteristics.
This paper attempts to conduct a semi-quantitative analysis of the loop characteristics of the varistor's volt-ampere characteristic curve under 8/20μS pulse current to confirm whether the loop characteristics are the intrinsic characteristics of the varistor ceramic.
2. Build the model
As shown in Figure 1, the equivalent circuit of the zinc oxide varistor in the current region after the breakdown under the 8/20μS pulse current. Among them, L is the lead inductance of the varistor and the equivalent inductance of the ceramic body, RV is the sensitive resistance of the varistor ceramic body (including nonlinear grain boundaries and grains), Rs is the lead resistance, i is the current flowing through the varistor, V ( i ) is the total voltage drop on the varistor, VV ( i ) is the sensitive resistance voltage drop of the varistor ceramic body, Vr ( i ) is the voltage drop on the lead resistance, di / dt is the rate of change of current with time, and di / dt is a function of current during pulse current, then the voltage drop on the inductor is Ld i / dt .
According to the equivalent circuit diagram 1, the series inductance cannot be zero. The existence of inductance will definitely produce a loop of volt-ampere characteristics during the impact test. The voltage in the rising section is higher than that in the falling section, which is consistent with the loop characteristics of the varistor. Therefore, it is assumed that the loop is caused by the equivalent inductance, and the equivalent inductance is regarded as a constant. The resistance of the varistor is a pure variable resistor. The voltage drop on the lead-out resistor and the resistance of the varistor is only related to the current size and has nothing to do with the current time change rate. It can be concluded that:
At the rising edge of the 8/20μS pulse current, the voltage on the varistor can be expressed as formula (1):
At the falling edge of the 8/20μS pulse current, the voltage on the varistor can be expressed as formula (2):
(2)
At the falling edge of the 8/20μS pulse current, corresponding to the same current value, the voltage drop on the varistor ceramic body is the same, as shown in formula (3a); at the same time, the voltage drop on the lead-out resistor is the same, as shown in formula (3b).
(3a)
(3b)
At the falling edge of the 8/20μS pulse current, corresponding to the same current value, subtracting equation (1) from equation (2) yields equation (4). The rising and falling edge voltage difference on the equivalent inductor corresponding to the same current value at the rising and falling edges is a function of the difference in the time rate of change of the current at the rising and falling edges. When the rising and falling edge voltage difference on the equivalent inductor and the difference in the time rate of change of the current at the rising and falling edges are known, the equivalent inductance value can be calculated.
V up ( i ) - V down ( i ) = L (d i up /d t - di down /d t )= f (d i/ d t ) (4)
3 Experimental conditions
The test samples are 20D101 (medium-pressure material), 20D620 (low-pressure material), 32D560 (low-pressure material) and 32D101 (low-pressure material), one each. The lead spacing of 20D products is 10mm, and the test points are the root of the leads and about 50mm from the leads. The lead spacing of 32D products is 15mm, and the test points are the root of the leads. The voltage drop of parallel leads with a spacing of 10mm and a length of 125mm is measured.
The impulse generator is SK-20KA, and the current is sampled by the shunt of the equipment. The voltage signal is directly sampled at the root of the two leads of the varistor, and the current and voltage signals are displayed and measured in sequence by the TDS102 oscilloscope. The impulse current waveform is 8/20μS, and the peak values are 2.0kA and 3.0kA.
4 Test results and analysis
4.1 Test data shows that the resistance effect on the lead cannot be ignored
Figure 2 is an example of the characteristic curve of the volt-ampere characteristic loop of the tested varistor under 8/20uS impact. The curve clearly shows obvious loop characteristics, and the rising edge voltage is greater than the falling edge. Figures 3 and 4 are the current and voltage waveforms captured by the oscilloscope. The voltage peak precedes the current peak. Unlike a simple inductor, the current time change rate is zero at the current peak, but it shows that the voltage between the first and last test points of the parallel leads is not equal at this time. The equal voltage value is reached after the peak current. The time difference between the current peak point and the zero voltage on the electrical lead in each test, and the current value at zero voltage are listed in Table 1. It can be said with certainty that the resistance effect on the lead cannot be ignored.
Figure 2 Partial volt-ampere characteristic curve of the product under 8/20μS pulse current of 3.1KA
Table 1 Differences between the voltage equalization points and current peaks at the beginning and end of product leads and pure leads under 8/20μS pulse current
Sample |
Peak value of impulse current
|
Current value at zero voltage point of conductor
|
The time difference between the current peak point and the conductor
|
125mm wire |
2 |
1.84 |
4.2 |
3 |
2.9 |
2.8 |
|
20D101 |
2 |
1.9 |
3 |
3 |
2.88 |
3.2 |
|
20D620 |
2 |
1.96 |
3.4 |
3 |
2.95 |
1.6 |
Table 2 shows the theoretically calculated resistance of a pair of parallel copper wires with a diameter of 1 mm and the corresponding voltage drop during impulse current. The data shows that the influence of the lead-out resistance cannot be ignored.
Table 2 Theoretical calculation results of the resistance of parallel double copper wires with a diameter of 1 mm
Current mA |
resistance |
Voltage drop V |
||
mΩ |
@0.9kA |
@2kA |
@3kA |
|
10 |
0.446 |
0.401 |
0.892 |
1.338 |
50 |
2.23 |
2.007 |
4.460 |
6.69 |
125 |
5.575 |
5.018 |
11.150 |
16.725 |
4.2 Calculate the equivalent inductance value from the test data
According to the current change rate and voltage difference at the rising and falling edges of the corresponding current obtained by the test, the equivalent inductance values of the 125mm parallel double copper wires, the lead wires and silver-clad ceramic body of 20D101, and the lead wires and silver-clad ceramic body of 20D620 are calculated according to formula (4), and are listed in Table 3, Table 4 and Table 5 respectively.
Table 3 Experimental deduced inductance values of 125 mm parallel twin copper conductors
2kA |
Current A |
900 |
1200 |
1500 |
1800 |
2000 |
Rising current change rate A/μS |
368 |
272 |
192 |
100 |
0 |
|
Falling edge current change rate A/μS |
-65.6 |
-73.6 |
-76.8 |
-60.8 |
0 |
|
The difference of the current change rate between the rising and falling edges is A/μS |
433.6 |
345.6 |
268.8 |
160.8 |
0 |
|
Rising edge voltage V |
63.6 |
48.8 |
35.6 |
24.8 |
8.8 |
|
Falling edge voltage V |
-5.6 |
-6 |
-4 |
-0.8 |
8.8 |
|
Voltage difference between rising and falling edges V |
69.2 |
54.8 |
39.6 |
25.6 |
0 |
|
Equivalent inductance nH |
159.6 |
158.6 |
147.3 |
159.2 |
|
|
3kA |
Current A |
900 |
1500 |
2000 |
2500 |
3000 |
Rising current change rate A/μS |
580 |
420 |
328 |
220 |
0 |
|
Falling edge current change rate A/μS |
-88 |
-120 |
-126 |
-108 |
0 |
|
The difference of the current change rate between the rising and falling edges is A/μS |
668 |
540 |
454 |
328 |
0 |
|
Rising edge voltage V |
93.8 |
71 |
58 |
42.8 |
9.6 |
|
Falling edge voltage V |
-10 |
-12 |
-12.8 |
-8.4 |
9.6 |
|
Voltage difference between rising and falling edges V |
103.8 |
83 |
70.8 |
51.2 |
0 |
|
Equivalent inductance nH |
155.4 |
153.7 |
155.9 |
156.1 |
|
Table 4 Experimental deduced inductance values of 20D101 lead wire and silver ceramic body
2kA |
Current A |
900 |
1200 |
1500 |
1800 |
2000 |
Rising current change rate A/μS |
368 |
272 |
192 |
80 |
0 |
|
Rising current change rate A/μS |
-65.6 |
-73.6 |
-76.8 |
-60.8 |
0 |
|
The difference of the current change rate between the rising and falling edges is A/μS |
433.6 |
345.6 |
268.8 |
140.8 |
0 |
|
Root rising edge voltage V |
220 |
227 |
230 |
235 |
234 |
|
Root falling edge voltage V |
181 |
194 |
207 |
223 |
234 |
|
Rising edge voltage V at 5cm wire |
249 |
250 |
249 |
244 |
237 |
|
Falling edge voltage V at 5cm wire |
178 |
192 |
205 |
222 |
237 |
|
The rising edge voltage V of the 5cm wire |
29 |
twenty three |
19 |
9 |
3 |
|
Falling edge voltage V of 5cm wire |
-3 |
-2 |
-2 |
-1 |
3 |
|
The voltage difference V between the rising and falling edges of the silver ceramic |
39 |
33 |
twenty three |
12 |
0 |
|
5cm wire rising and falling edge voltage difference V |
32 |
25 |
twenty one |
10 |
0 |
|
Silver ceramic chip inductance nH |
89.9 |
95.5 |
85.6 |
85.2 |
|
|
5cm wire inductance nH |
73.8 |
72.3 |
78.1 |
71.0 |
|
|
3kA |
Current A |
900 |
1500 |
2000 |
2500 |
3000 |
Rising current change rate A/μS |
580 |
424 |
328 |
220 |
0 |
|
Rising current change rate A/μS |
-88 |
-120 |
-126 |
-108 |
0 |
|
The difference of the current change rate between the rising and falling edges is A/μS |
668 |
544 |
454 |
328 |
0 |
|
Root rising edge voltage V |
232 |
250 |
260 |
268 |
268 |
|
Root falling edge voltage V |
174 |
198 |
218 |
238 |
268 |
|
Rising edge voltage V at 5cm wire |
275 |
281 |
285 |
288 |
272 |
|
Falling edge voltage V at 5cm wire |
170 |
191 |
212 |
234 |
272 |
|
The rising edge voltage V of the 5cm wire |
43 |
31 |
25 |
20 |
4 |
|
Falling edge voltage V of 5cm wire |
-4 |
-7 |
-6 |
-4 |
4 |
|
The voltage difference V between the rising and falling edges of the silver ceramic |
58 |
52 |
42 |
30 |
0 |
|
5cm wire rising and falling edge voltage difference V |
47 |
38 |
31 |
twenty four |
0 |
|
Silver ceramic chip inductance nH |
86.8 |
95.6 |
92.5 |
91.5 |
|
|
5cm wire inductance nH |
70.4 |
69.9 |
68.3 |
73.2 |
|
Table 5 Experimental deduced inductance values of 20D620 lead wire and silver ceramic body
2kA |
Current A |
900 |
1200 |
1500 |
1800 |
2000 |
Rising current change rate A/μS |
368 |
272 |
192 |
80 |
0 |
|
Rising current change rate A/μS |
-65.6 |
-73.6 |
-76.8 |
-60.8 |
0 |
|
The difference of the current change rate between the rising and falling edges is A/μS |
433.6 |
345.6 |
268.8 |
140.8 |
0 |
|
Root rising edge voltage V |
186 |
197 |
205 |
211 |
214 |
|
Root falling edge voltage V |
157 |
172 |
185 |
201 |
214 |
|
Rising edge voltage V at 5cm wire |
212 |
218 |
220 |
220 |
217 |
|
Falling edge voltage V at 5cm wire |
155 |
168 |
182 |
200 |
217 |
|
The rising edge voltage V of the 5cm wire |
26 |
twenty one |
15 |
9 |
3 |
|
Falling edge voltage V of 5cm wire |
-2 |
-4 |
-3 |
-1 |
3 |
|
The voltage difference V between the rising and falling edges of the silver ceramic |
29 |
25 |
20 |
10 |
0 |
|
5cm wire rising and falling edge voltage difference V |
28 |
25 |
18 |
10 |
0 |
|
Silver ceramic chip inductance nH |
66.9 |
72.3 |
74.4 |
71.0 |
|
|
5cm wire inductance nH |
64.6 |
72.3 |
67.0 |
71.0 |
|
|
3kA |
Current A |
900 |
1500 |
2000 |
2500 |
3000 |
Rising current change rate A/μS |
620 |
424 |
328 |
220 |
0 |
|
Rising current change rate A/μS |
-88 |
-120 |
-126 |
-108 |
0 |
|
The difference of the current change rate between the rising and falling edges is A/μS |
708 |
544 |
454 |
328 |
0 |
|
Root rising edge voltage V |
196 |
216 |
231 |
244 |
246 |
|
Root falling edge voltage V |
153 |
177 |
198 |
219 |
246 |
|
Rising edge voltage V at 5cm wire |
237 |
247 |
255 |
259 |
250 |
|
Falling edge voltage V at 5cm wire |
148 |
172 |
192 |
214 |
250 |
|
The rising edge voltage V of the 5cm wire |
41 |
31 |
twenty four |
15 |
4 |
|
Falling edge voltage V of 5cm wire |
-5 |
-5 |
-6 |
-5 |
4 |
|
The voltage difference V between the rising and falling edges of the silver ceramic |
43 |
39 |
33 |
25 |
0 |
|
5cm wire rising and falling edge voltage difference V |
46 |
36 |
30 |
20 |
0 |
|
Silver ceramic chip inductance nH |
60.7 |
71.7 |
72.7 |
76.2 |
|
|
5cm wire inductance nH |
65.0 |
66.2 |
66.1 |
61.0 |
|
4.3 It is a reasonable method to derive lead inductance by experiment
Table 6 compares the theoretical lead inductance calculated using equation (5) [5] and the equivalent lead inductance derived from experiments.
(5)
Table 6 Comparison of theoretically calculated lead inductance and experimentally derived equivalent lead inductance
Theoretical calculation of inductance |
product |
125mm wire |
20101 |
20620 |
Spacing a mm |
10.3 |
12.2 |
12.2 |
|
Lead wire diameter d mm |
1 |
1 |
1 |
|
Lead length l mm |
125 |
56 |
50 |
|
Theoretical calculation of inductance nH |
150 |
71.2 |
63.5 |
|
2kA derivation inductor |
Mean nH |
156.2 |
73.8 |
68.7 |
Range ratio% |
7.86% |
9.62% |
11.29% |
|
and theoretical deviation rate% |
4.11% |
3.68% |
8.23% |
|
3kA derivation inductance |
Mean nH |
155.3 |
70.4 |
64.6 |
Range ratio% |
1.54% |
6.94% |
8.06% |
|
and theoretical deviation rate% |
3.52% |
-1.10% |
1.65% |
It can be seen from Table 6 that within a reasonable error range, the theoretical calculated value of the lead inductance is very close to the experimentally derived value. The lead inductance is a constant, and the method of deriving the equivalent inductance value by experiment is a feasible method.
4.4 The equivalent inductance of the silver-clad ceramic body of the varistor is a constant
The equivalent inductance values of the silver-clad ceramic resistors of 20D101 and 20D620 varistors derived from the experiments in Tables 4 and 5 are listed in Table 7. It is obvious that within a reasonable experimental error range, the impact equivalent inductance of the silver-clad ceramic resistor is a constant.
Table 7 Experimental derivation of equivalent inductance of 20D product silver-clad ceramic body
product |
2kA test data |
3kA test data |
||
Average value of equivalent inductance nH |
Range Ratio |
Average value of equivalent inductance nH |
Range Ratio |
|
20D101 |
89.1 |
11.52% |
91.6 |
9.57% |
20D620 |
71.2 |
10.57% |
70.3 |
22.02% |
4.5 The ceramic body has a large equivalent inductance
Silver-clad ceramic equivalent inductance, including the electrode equivalent inductance of the ceramic equivalent inductance. The voltage difference between the rising and falling edges of the tested 32D560 and 32D101 products is compared, and the comparison results of the equivalent inductance and thickness of the silver-clad ceramic bodies of 32D101 and 32D560 are listed in Table 8. The comparison of the equivalent inductance and thickness of the silver-clad ceramic bodies of 20D101 and 20D560 is listed in Table 9. As shown in Table 8, the thickness of 32D101 is 1.25 times that of 32D560, and the equivalent inductance of the silver-clad ceramic body of the former is 1.16 times that of the latter. The thickness of 20D101 is 0.76 times that of 20D620, and the equivalent inductance of the silver-clad ceramic body of the former is 1.28 times that of the latter.
The above non-corresponding relationship between inductance and ceramic body thickness shows that the thickness of the ceramic body is not the main influencing factor of the equivalent inductance of the silver-clad ceramic body. It can be explained that the ceramic thickness is a factor that forms the electrode equivalent inductance. The area surrounded by the electrode is not more than 1/20 compared with the area surrounded by the 5cm wire, which can be ignored. In this way, the electrode equivalent inductance will be less than 5nH. Of course, it is really nothing in the equivalent inductance of the ceramic body above 70nH. Such a large silver-clad ceramic body equivalent inductance is significantly positively correlated with the varistor voltage of the product, and the varistor voltage is proportional to the number of grain boundaries. It shows that the equivalent inductance of the silver-clad ceramic body mainly comes from the grain boundary, so only a small part of the equivalent inductance of the silver-clad ceramic body comes from the electrode equivalent inductance, and the ceramic body equivalent inductance coming from the grain boundary is much larger than the electrode equivalent inductance.
This shows that the varistor ceramic body has a large impact equivalent inductance, which will cause the varistor's volt-ampere characteristic loop characteristics when the impact current is 8/20μS. The loop characteristics are the intrinsic characteristics of the varistor ceramic body. Even if the inductance is completely eliminated, the loop characteristics cannot be eliminated.
Table 8 Comparison of equivalent inductance and thickness of 32D101 and 32D560 silver-clad ceramic bodies
product |
32D101 |
32D560 |
|
|
|
Current A |
Silver-clad ceramic rising and falling edge voltage difference V |
||||
2kA |
900 |
37 |
32 |
1.16 |
1.25 |
1200 |
32 |
27 |
1.19 |
||
1500 |
26 |
twenty two |
1.18 |
||
1800 |
17 |
15 |
1.13 |
||
Ratio Mean |
1.16 |
||||
3kA |
900 |
55 |
46.5 |
1.18 |
|
1500 |
50 |
42 |
1.19 |
||
2000 |
42 |
36 |
1.17 |
||
2500 |
30 |
27 |
1.11 |
||
Ratio Mean |
1.16 |
Table 9 Comparison of equivalent inductance and thickness of 20D101 and 20D560 silver-clad ceramic bodies
product |
20D101 |
20D620 |
|
|
Current A |
The average equivalent inductance value nH derived by the silver ceramic sheet |
|||
2kA |
89.1 |
71.2 |
1.25 |
0.76 |
3kA |
91.6 |
70.3 |
1.30 |
5 Conclusion
The volt-ampere characteristic of the zinc oxide varistor under 8/20μS pulse current presents a loop characteristic, which is an intrinsic characteristic of the varistor ceramic. The varistor ceramic itself has a constant equivalent inductance under 8/20μS pulse current, which is related to the number of grain boundaries and the ceramic material, causing the loop characteristic of the volt-ampere characteristic.
References
[1] Liang Yujin. Application of Metal Oxide Nonlinear Resistors in Power Systems. Wuhan: Huazhong University of Science and Technology Press, 1993.
[2] Wu Weihan, He Jinliang, Gao Yuming, et al. Tsinghua University Academic Monograph: Characteristics and Applications of Metal Oxide Nonlinear Resistors. Beijing: Tsinghua University Press, 1998.
[3] Sun Danfeng, Ji Youzhang, Yao Xueling, Chen Jingliang, Zhang Junfeng, et al. Volt-ampere characteristics of zinc oxide varistor under 8/20us impulse current. Paper presented at the 14th Annual Conference on Voltage Sensitive Technology of the Sensitive Technology Branch of the Chinese Institute of Electronics, Semiconductor Device Application, 2007: 1~5
[4] Zhang Junfeng, Xia Bo, Sun Danfeng, et al. Further exploration of the aging mechanism of zinc oxide varistors. Semiconductor Device Applications, Special Issue of the 16th Annual Conference on Voltage Sensitive Technology, Chinese Institute of Electronics, 2009: 68~72
[5] [Soviet Union] Heitvisi. Inductance Calculation. Beijing: National Defense Industry Press. 1960.
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