High-power LED chip packaging method

1. Size increase method: By increasing the effective light-emitting area of ​​a single LED
, and by increasing the size to make the current flowing through the TCL layer evenly distributed, the circuit electrode structure (generally a comb-shaped electrode) is specially designed to achieve the expected luminous flux , but simply increasing the light-emitting area cannot solve the fundamental heat dissipation and light output problems.
2. Silicon backplane flip-chip method: 1. Deposit a NiAu layer with a thickness greater than 500 angstroms on the P-type GaNiMg on the top of the epitaxial wafer for ohmic contact and back reflection, 2. Use a mask to selectively remove the N-type layer exposed by the P-type layer and the multi-quantum well active layer 3. Deposit and cut to form an N-type ohmic contact layer. The chip size is 1X1mm, the P-type ohmic contact is square, and the N-ohmic contact is inserted in it in a comb shape, thus shortening the substrate resistance and reducing it. 4. Flip-chip solder the metallized AlGaInN chip with bumps on a silicon carrier with ESD 3. Ceramic base flip-chip method: It is to prepare a large light-emitting area and a corresponding ceramic base suitable for eutectic welding electrode structure 4. Sapphire substrate transition method: It is to grow a PN junction on a sapphire substrate according to the traditional ZnGaN chip manufacturing method Then the sapphire substrate is cut off and connected with traditional quaternary materials to produce a large size of upper and lower electrode structures Blue LED chip After forming, the high power The basic structure of blue chip packaging is generally to connect the chip end with copper-based silver-based thermal deposition and then connect the heat sink to the aluminum-based heat sink using a stepped thermal conductive structure. The high thermal conductivity of the copper-based silver-based heat sink is used to efficiently transfer the heat generated by the chip to the aluminum-based heat sink, and then the aluminum-based heat sink dissipates it. It is generally used for silver glue, but the thermal resistance of silver glue is high and the TG point is low, so tin is now used.