introduction
80+ and Climate Savers Computing have set a strong efficiency standard for computer power supplies. The “Platinum” level of these standards states that computer power supplies must be 90% efficient at 20% rated load, 94% efficient at 50% rated load, and 91% efficient at 100% load. To meet these standards, some power supply designers choose to use a phase-shifted, full-bridge DC/DC converter with synchronous rectification. This topology is a better choice because it can achieve zero voltage switching (ZVS) on the main FET. A popular method of driving the synchronous rectifiers is to drive the main FET with an already existing signal. The only problem with this is that it requires a delay in the main FET to achieve zero voltage switching. This causes both synchronous rectifiers to turn off at the same time during the fast freewheel period, allowing excessive body diode conduction and ultimately reducing system efficiency. The purpose of this article is to suggest a different timing for driving these synchronous rectifiers to reduce body diode conduction and ultimately improve overall system efficiency.
There are pulse width modulators (PWMs) on the market that are designed to control phase-shifted, full-bridge converters rather than drive synchronous rectifiers (QE and QF). Engineers have found that they can use these controllers in this application by controlling the synchronous FETs through the control signals OUTA and OUTB of the PWM controller. Figure 1 shows a functional diagram of one of these converters.
Figure 1 Synchronous rectification improved phase-shifted, full-bridge converter
question
The PWM controller helps achieve ZVS in these converters by delaying the turn-on of the FETs of the H-bridge (QA, QB, QC, QD). The delay (tDelay) between the turn-on and turn-off transitions of FETs QA and QB causes the synchronous FETs QE and QF to turn off simultaneously, allowing their body diodes to conduct as described above. The following equations provide a good estimate of the body diode conduction losses of QE and QF during freewheeling:
Where POUT is the output power, VOUT is the output voltage, VD is the forward voltage drop of the body diode, and fs is the inductor switching frequency.
Excessive body diode conduction losses (PDiode) of QE and QF will prevent the design from meeting the “Platinum” standard. See Figure 1 and Figure 2 for more details. As shown, OUTA drives FETs QA and QF, while OUTB drives FETs QB and QE. V1 is the voltage at the input of the LOUT and COUT filter network, while VQEd and VQFd are the voltages of the corresponding synchronous rectifiers QE and QF.
Figure 2 Timing diagram of the converter shown in Figure 1
Solution
If you want to reduce the QE and QF body diode conduction, it is best to turn on these synchronous rectifiers during the QA and QB delay period (tDelay). To do this, the FETs QE and QF must be driven by their own outputs, where the "on" time and non-synchronous "off" time overlap. Figure 3 shows the functional schematic of a phase-shifted, full-bridge converter with six separate drive signals (OUTA to OUTF). The signals for QE (OUTE) and QF (OUTF) are generated by turning OUTE and OUTF on and off according to the edges of QA to QD. Table 1 and Figure 4 show the timing required to accomplish this. The theoretical waveforms shown in Figure 4 show that this technique eliminates the body diode conduction that occurs with the gate drive signals shown in Figure 2 when both gate drives are off during tDelay.
Table 1 OUTE and OUTF on/off transition
Figure 3. Phase-shifted, full-bridge converter using the timing of Table 1.
Figure 4 Timing diagram for reducing QE and QF body diode conduction
Test results
To see how effective this technique is in reducing body diode conduction, a 390-V to 12-V phase-shifted, full-bridge converter was modified to drive the FETs with the signals shown in Figures 2 and 4.
Figure 5 shows the waveforms of the gates of the synchronous FETs (QE and QF) driven by the OUTA and OUTB PWM outputs. In the figure, the body diode conduction can be observed during the delay time (tDelay) between OUTA and OUTB.
Figure 5 QE and QF main diode conduction waveforms
Figure 6 shows the waveforms of the gates of the synchronous FETs (QE and QF) driven by the OUTE and OUTF signals shown in Figure 3. These signals are generated from TI's new UCC28950 phase-shifted, full-bridge controller. Figure 6 shows that the body diodes are not conducting while FETs QE and QF are conducting. Although some body diode conduction can still be seen, it is not as much as in Figure 5.
Figure 6 shows the waveforms of the QE and QF low body diode conduction
We measured the efficiency of a 600-W DC/DC converter from 20% to full load for both drive schemes (OUTA and OUTB vs. OUTE and OUTF). In Figure 7 on the next page, converter efficiency data for both drive schemes is shown. We can see that using OUTE and OUTF is about 0.4% more efficient from 50% to 100% load than using OUTA and OUTB. A 0.4% efficiency increase may not seem like much, but it adds up when designers are striving to reach the “platinum” standard.
Figure 7 Efficiency of a 600-W DC/DC converter under different QE and QF driving schemes
in conclusion
Even if we can control a phase-shifted, full-bridge converter with synchronous rectifiers through a phase-shifted, full-bridge controller that is not designed for synchronous rectification (OUTA and OUTB drive scheme), the turn-on delay between OUTA and OUTB required to achieve ZVS will cause both synchronous FETs to turn off at the same time (tDelay). This delay will cause excessive body diode conduction during the fast freewheeling period of the FETs. This article shows that a more effective approach is to superimpose the "on" time of the synchronous rectifiers during the fast freewheeling period so that the body diode does not conduct. With this approach, although the body diode conduction is not completely eliminated, it is greatly reduced, thereby improving the overall system efficiency and making the "platinum" efficiency standard easier to achieve.
Previous article:Transistor Drive Load Exploration
Next article:Low current flash lamp driving solution based on CP2130
Recommended ReadingLatest update time:2024-11-16 20:26
- Popular Resources
- Popular amplifiers
- Modern Electronic Technology Training Course (Edited by Yao Youfeng)
- Modern arc welding power supply and its control
- Virtualization Technology Practice Guide - High-efficiency and low-cost solutions for small and medium-sized enterprises (Wang Chunhai)
- Sensor Principle and Application Circuit Design (Edited by Chen Shuwang, Song Lijun, Xu Yunfeng)
- MathWorks and NXP Collaborate to Launch Model-Based Design Toolbox for Battery Management Systems
- STMicroelectronics' advanced galvanically isolated gate driver STGAP3S provides flexible protection for IGBTs and SiC MOSFETs
- New diaphragm-free solid-state lithium battery technology is launched: the distance between the positive and negative electrodes is less than 0.000001 meters
- [“Source” Observe the Autumn Series] Application and testing of the next generation of semiconductor gallium oxide device photodetectors
- 采用自主设计封装,绝缘电阻显著提高!ROHM开发出更高电压xEV系统的SiC肖特基势垒二极管
- Will GaN replace SiC? PI's disruptive 1700V InnoMux2 is here to demonstrate
- From Isolation to the Third and a Half Generation: Understanding Naxinwei's Gate Driver IC in One Article
- The appeal of 48 V technology: importance, benefits and key factors in system-level applications
- Important breakthrough in recycling of used lithium-ion batteries
- Innolux's intelligent steer-by-wire solution makes cars smarter and safer
- 8051 MCU - Parity Check
- How to efficiently balance the sensitivity of tactile sensing interfaces
- What should I do if the servo motor shakes? What causes the servo motor to shake quickly?
- 【Brushless Motor】Analysis of three-phase BLDC motor and sharing of two popular development boards
- Midea Industrial Technology's subsidiaries Clou Electronics and Hekang New Energy jointly appeared at the Munich Battery Energy Storage Exhibition and Solar Energy Exhibition
- Guoxin Sichen | Application of ferroelectric memory PB85RS2MC in power battery management, with a capacity of 2M
- Analysis of common faults of frequency converter
- In a head-on competition with Qualcomm, what kind of cockpit products has Intel come up with?
- Dalian Rongke's all-vanadium liquid flow battery energy storage equipment industrialization project has entered the sprint stage before production
- Allegro MicroSystems Introduces Advanced Magnetic and Inductive Position Sensing Solutions at Electronica 2024
- Car key in the left hand, liveness detection radar in the right hand, UWB is imperative for cars!
- After a decade of rapid development, domestic CIS has entered the market
- Aegis Dagger Battery + Thor EM-i Super Hybrid, Geely New Energy has thrown out two "king bombs"
- A brief discussion on functional safety - fault, error, and failure
- In the smart car 2.0 cycle, these core industry chains are facing major opportunities!
- The United States and Japan are developing new batteries. CATL faces challenges? How should China's new energy battery industry respond?
- Murata launches high-precision 6-axis inertial sensor for automobiles
- Ford patents pre-charge alarm to help save costs and respond to emergencies
- New real-time microcontroller system from Texas Instruments enables smarter processing in automotive and industrial applications
- What is the continuity threshold used for? Analysis of the wiring harness tester function
- Does DDR design require back drilling?
- [Integrated subway security control system based on Raspberry Pi 400] Material unboxing - Raspberry Pi 400
- SinA332.0 development board Linux & Qt adjust VGA resolution to 1280x720
- Single chip microcomputer CPU card programming system main frequency setting
- Award-winning live broadcast: Microchip's trusted platform for the CryptoAuthentication family
- What is the Internet of Things? What is the concept of the Internet of Things?
- DSP 2407 Book Request
- GD32307E-START IO analog SPI control RGBLED (03)
- 【GD32E503 Review】+ cJSON Porting Test