A broadband transformer for power synthesis in CMOS RF power amplifiers is designed. By analyzing and comparing the two power synthesis forms of transformers in parallel and series, the influence of turns ratio, number of power units and parasitic resistance on the power synthesis performance of transformers is pointed out; a design method for on-chip transformers is proposed, that is, multi-layer metal stacking is used in parallel and the power amplifier unit is built into the transformer coil, which solves the difficulties of excessive parasitic resistance and insufficient effective coupling length when designing transformers in CMOS process. The loss of the designed transformer in the 2-3 GHz frequency band is less than 1.35 dB, and its power synthesis efficiency is as high as more than 76%, which is suitable for the application of multi-mode and multi-band RF front-ends.
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