This paper mainly introduces the principle and design method of high-efficiency Class E RF power oscillator. Through circuit equivalent transformation, the Class E RF power oscillator is finally converted into the same structure as the Class E amplifier. The MOS tube works in a soft switching state, and the high drain voltage and large current will not overlap at the same time, which greatly reduces the power loss. Under the same working conditions, it can obtain high efficiency similar to that of the Class E amplifier. This paper takes the ARF461 LDMOS as a power device and combines the application of the Class E RF oscillator in the plasma source to give a design example. The ADS simulation results show that at an operating frequency of 13.56MHz, the oscillator outputs 46W of power and has an efficiency of 92%, which meets the design expectations.
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