Aiming at the use requirements under room temperature (293 K), a high-sensitivity photoconductive InAsSb infrared detector in the 2~9 μm band was made using InAsSb single crystal material and immersion lens. The measured spectral response value appears in 1.656 5~8.989 μm. Within the spectral response band, the maximum responsivity value is the comparison group C2 and C3. The room temperature (293 K) use requirements and the design purpose of the photoconductive InAsSb infrared detector with a response spectrum of 2~9 μm band have been preliminarily achieved.
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