IV-3HOIV-3. MESFET and Devices Parameters(1) GaAs MESFET 1 x 250 m MESFETCi : Gate-to-Source capacitance ~ 0.3 pF ri : Charging resistance of Ci ~ 25 Cgd : Gate-to-Drain capacitance ~ 0.02 pFCgd jωτ gmVeLsRgLgLdV+CgsRsRiCds : Drain-to-Source capacitance ~ 0.05 pFRdrds : Drain-to-Source resistance ~ 600 gm : transconductance ~ 40 mSgds CdsfT ≈gm 2πCifT =1 2πτ c=vs 2πLτc =L vsf maxf = T 2rds 33 x 103 ri LICE651 MMIC DesignIV-3-1 IV-3. MESFET and Devices Parameters(2) Measured S-ParametersS11 : RC serial circuit small with zero CgdConstant resistant circleS12 : small because of small Cgd S21 : input voltage btn Cgs at low fdecreased voltage btn Cgs at hier fS22 : RC parallel circuitConstant conductance circle High f : increased……
You Might Like
Recommended ContentMore
Open source project More
Popular Components
Searched by Users
Just Take a LookMore
Trending Downloads
Trending ArticlesMore