2_9GHz0_35μm CMOS Low Noise AmplifierActa Electronica Sinica Vol. 29 No. 11 Nov. 2001Tao Rui, Wang Zhigong, Xie Tingting, Chen Haitao (Institute of Radio Frequency and Optoelectronic Integrated Circuits, Southeast University, Nanjing 210096, Jiangsu, China) Abstract: With the continuous reduction of feature size, the characteristic frequency of MOSFET in deep submicron CMOS process has reached above 50 GHz, making it possible to realize high-frequency analog integrated circuits in GHz band using CMOS process. More and more RF engineers are beginning to use advanced CMOS process to design RF integrated circuits. This paper presents a 2_19 GHz monolithic low noise amplifier realized using 0135 μm CMOS process. The amplifier uses spiral inductors integrated on the chip to achieve low noise and monolithic integration. Under 3V power supply, the operating current is 8mA and the power gain is greater than 10dB. , input reflection is less than - 12dB. Keywords: CMOS process; low noise amplifier; spiral inductor Document code: TN722 Document identification code: A Article number: 037222112 (2001) 1121530203μ 219 GHz 0135 m CMOS Low Noise AmplifierTAO Rui ,WANG Zhi2gong ,XIE Ting2ting ,CHEN Hai2tao( Institute of RF2 & OE2ICs , Southeast University , Nanjing , Jiangsu 210096 , China)Abstract : With the scaling2down of the transistor gate2leng……
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