With the advancement of microelectronics technology, the feature size of very large scale integrated circuits (VLSI) has entered the nanometer range. Nanoscale processes have many characteristics that are different from previous micron and submicron processes, which brings many challenges to manufacturing and design, such as lithography, leakage power consumption, manufacturability design, chip on-wafer parameter fluctuations, etc. In order to ensure the progress and quality of the design, it is necessary to conduct in-depth analysis of these characteristics and establish new analysis and design methods and means.
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