This article discusses the basic concepts of basic non-volatile memory (NVM). The first part introduces the basics of NVM, including the background of NVM and common memory terminology. In the second part, I will introduce how to program NVM through hot electron injection. The third part includes the erasure of NVM using the FOWLER-NORDHEIM tunneling effect. At the same time, the principle of simple FN tunneling will also be explained here. The fourth part introduces the model used to predict the programming characteristics of NVM - the \"lucky electron\" model on which the hot electron injection mechanism relies. The last part introduces issues related to NVM reliability, such as data retention, endurance, and disturbance. Keywords: non-volatile, memory, Flash, EPROM, EEPROM, hot electron injection, tunneling, reliability, data retention, endurance, disturbance, flash memory
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