MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000BX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
FG4000BX-90DA
OUTLINE DRAWING
Dimensions in mm
GATE (WHITE)
500 ± 8
AUXILIARY CATHODE
CONNECTOR (RED)
φ
85 ± 0.2
φ
3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
q
I
TQRM
Repetitive controllable on-state current ...........3000A
q
I
T(AV)
Average on-state current .....................1000A
q
V
DRM
Repetitive peak off state voltage ...................4500V
q
Anode short type
26 ± 0.5
0.4 MIN
0.4 MIN
φ
85 ± 0.2
φ
120 MAX
ANODE
φ
3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R(DC)
V
DRM
V
DSM
V
D(DC)
+
: V
GK
= –2V
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak off-state voltage
+
DC off-state voltage
+
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Voltage class
90DA
19
19
19
4500
4500
2500
Conditions
V
DM
= 4500V, T
j
= 125°C, C
S
= 3.0µF, L
S
= 0.25µH
f = 60Hz, sine wave
θ
= 180°, T
f
= 78°C
One half cycle at 60Hz
One cycle at 60Hz
V
D
= 3400V, I
GM
= 25A, T
j
= 125°C
Ratings
3000
1600
1000
20
1.7
×
10
6
500
10
19
130
1100
520
33
130
300
–40 ~ +125
–40 ~ +150
32 ~ 40
1600
Unit
V
V
V
V
V
V
Unit
A
A
A
kA
A
2
s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
Symbol
I
TQRM
I
T(RMS)
I
T(AV)
I
TSM
I
2t
d
iT
/d
t
V
FGM
V
RGM
I
FGM
I
RGM
P
FGM
P
RGM
P
FG(AV)
P
RG(AV)
T
j
T
stg
—
—
Recommended value 38
Standard value
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000BX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
V
TM
I
RRM
I
DRM
I
RG
d
v
/d
t
t
gt
t
gq
I
GQM
V
GT
I
GT
R
th(j-f)
Parameter
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Test conditions
T
j
= 125°C, I
TM
= 3000A, Instantaneous measurment
T
j
= 125°C, V
RRM
Applied
T
j
= 125°C, V
DRM
Applied, V
GK
= –2V
T
j
= 125°C, V
RG
= 19V
T
j
= 125°C, V
D
= 2250V, V
GK
= –2V
T
j
= 125°C, I
TM
= 3000A, I
GM
= 25A, V
D
= 3400V
T
j
= 125°C, I
TM
= 3000A, V
DM
= 4500V, d
iGQ
/d
t
= –40A/µs
V
RG
= 17V, C
S
= 3.0µF, L
S
= 0.25µH
DC METHOD : V
D
= 24V, R
L
= 0.1Ω, T
j
= 25°C
Junction to fin
Min
—
—
—
—
1000
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
750
—
—
—
Max
3.8
100
150
100
—
6
30
—
1.5
3200
0.012
Unit
V
mA
mA
mA
V/µs
µs
µs
A
V
mA
°C/W
PERFORMANCE CURVES
SURGE ON-STATE CURRENT (kA)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE CHARACTERISTIC
10
4
7
T
j
= 125°C
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
30
27
24
21
18
15
12
9
6
3
0
0
10
2 3
5 7 10
1
2 3
5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
10
0
2 3 5 7 10
1
0.015
GATE CHARACTERISTICS
THERMAL IMPEDANCE (°C/W)
GATE VOLTAGE (V)
10
2
7
5
3
2
V
FGM
= 10V
P
FGM
= 520W
0.012
10
1
7
5
P
FG(AV)
= 130W
3
V
GT
= 1.5V
2
10
0
7
5
3
2
10
–1
T
j
= 25°C
I
GT
= 3200mA
I
FGM
= 130A
0.009
0.006
0.003
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (S)
10
3
2 3 5 7 10
4
2 3 5 7 10
5
2 3 5 7 10
6
GATE CURRENT (mA)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000BX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ON-STATE POWER DISSIPATION (W)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4000
3500
120°
180°
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
130
120
FIN TEMPERATURE (°C)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
3000
60°
90°
θ
= 30°
110
100
90
80
70
60
θ
= 30°
2500
2000
1500
1000
500
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
60° 90° 120° 180°
300
600
900
1200
50
0
300
600
900
1200
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ON-STATE POWER DISSIPATION (W)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
4800
4200
3600
3000
2400
1800
1200
600
0
0
180°
120°
90°
60°
θ
= 30°
270°
DC
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
140
130
FIN TEMPERATURE (°C)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120
110
100
90
80
70
60
0
θ
= 30°
60°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120°
270°
90°
180°
DC
250 500 750 1000 1250 1500 1750 2000
250 500 750 1000 1250 1500 1750 2000
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
8000
GATE TRIGGER CURRENT (mA)
TURN ON TIME t
gt
, TURN ON DELAY TIME t
d
(µs)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
V
D
= 5 ~ 20V
I
T
= 25 ~ 200A
HALF SINE WAVE
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
t
gt
I
T
= 3000A
V
D
= 3400V
d
iT
/d
t
= 500A/µs
d
iG
/d
t
= 20A/µs
T
j
= 125°C
7000
6000
5000
4000
3000
2000
1000
0
–60
–20
20
t
d
60
100
140
JUNCTION TEMPERATURE (°C)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000BX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME t
gq
, TURN OFF STORAGE TIME t
s
(µs)
TURN OFF TIME t
gq
, TURN OFF STORAGE TIME t
s
(µs)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
V
D
= 2250V
V
DM
= 4500V
d
iGQ
/d
t
= –40A/µs
25
V
RG
= 17V
t
gq
C
S
= 3.0µF
L
S
= 0.25µH
20
T
j
= 125°C
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
45
40
35
30
25
20
V
D
= 2250V
15
I
T
= 3000A
10
V
DM
= 4500V
t
s
V
RG
= 17V
C
S
= 3.0µF
5
L
S
= 0.25µH
T
j
= 125°C
t
gq
t
s
15
10
5
500
1100
1700
2300
2900
3500
0
0 10 20 30 40 50 60 70 80 90 100
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
1000
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1000
TURN OFF GATE CURRENT (A)
TURN OFF GATE CURRENT (A)
V
D
= 2250V
V
DM
= 4500V
d
iGQ
/d
t
= –40A/µs
800
V
RG
= 17V
C
S
= 3.0µF
L
S
= 0.25µH
600
T
j
= 125°C
800
600
400
400
200
0
500
200
1000
1500
2000
2500
3000
0
V
D
= 2250V
V
DM
= 4500V
I
T
= 3000A
V
RG
= 17V
C
S
= 3.0µF
L
S
= 0.25µH
T
j
= 125°C
0
20
40
60
80
100
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN ON SWITCHING ENERGY
(MAXIMUM)
4.0
TURN OFF SWITCHING ENERGY
(MAXIMUM)
10
V
D
= 2250V
d
iGQ
/d
t
= –40A/µs
SWITCHING ENERGY Eon (J/P)
SWITCHING ENERGY Eoff (J/P)
V
D
= 2250V
I
GM
= 25A
3.5
d
iG
/d
t
= 10A/µs
C
S
= 3.0µF
3.0
R
S
= 5Ω
T
j
= 125°C
d
iT
/d
t
= 500A/µs
300A/µs
9
V
DM
= 4500V
8
V
RG
= 19V
7
C
S
= 3.0µF
6
T
j
= 125°C
5
4
3
2
1
0
500
1000
1500
2000
2500
3000
2.5
2.0
1.5
1.0
0.5
L
S
= 0.25µH
100A/µs
0
500
1000
1500
2000
2500
3000
TURN ON CURRENT (A)
TURN OFF CURRENT (A)
Aug.1998
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