TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘3072F3
‘3082F3
V
DRM
V
58
66
V
(BO)
V
72
82
D PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
G
G
G
MDXXAE
NC - No internal connection
q
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
I
TSP
A
80
70
60
45
38
50
50
50
35
P PACKAGE
(TOP VIEW)
q
T
G
G
R
1
2
3
4
8
7
6
5
T
G
G
R
MDXXAF
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T
1
2
3
MDXXAG
MD23AA
q
Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
G
R
device symbol
T
R
q
UL Recognized, E132482
description
These low voltage dual symmetrical transient
voltage suppressor devices are designed to
protect ISDN applications against transients
caused by lightning strikes and a.c. power lines.
Offered in two voltage variants to meet battery
and protection requirements they are guaranteed
to suppress and withstand the listed international
lightning surges in both polarities. Transients are
initially clipped by breakdown clamping until the
voltage rises to the breakover level, which
causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the
current subsides.
SD3XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
description (Continued)
The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
RATING
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.5/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz,
1s
D Package
P Package
SL Package
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
Linear current ramp, Maximum ramp value < 38 A
di
F
/dt
T
J
T
stg
I
TSM
I
TSP
120
80
70
60
50
38
50
50
45
35
4
6
6
250
-40 to +150
-40 to +150
A/µs
°C
°C
A rms
A
‘3072F3
‘3082F3
SYMBOL
V
DRM
VALUE
± 58
± 66
UNIT
V
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
I
DRM
I
D
C
off
Repetitive peak off-
state current
Off-state current
TEST CONDITIONS
V
D
= ±2V
DRM
, 0°C < T
J
< 70°C
V
D
= ±50 V
f = 100 kHz, V
d
= 100 mV
Off-state capacitance
V
D
= 0,
D Package
P Package
SL Package
50†
65†
30†
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
TISP3072F3
MIN
MAX
±10
±10
150
200
100
50†
65†
30†
TISP3082F3
MIN
MAX
±10
±10
150
200
100
fF
UNIT
µA
µA
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
† Typical value of the parameter, not a limit value.
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C
PARAMETER
I
DRM
Repetitive peak off-
state current
TEST CONDITIONS
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
TISP3072F3
MIN
MAX
±10
TISP3082F3
MIN
MAX
±10
UNIT
µA
PRODUCT
INFORMATION
2
TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C (Continued)
PARAMETER
dv/dt = ±250 V/ms,
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
Breakover voltage
Source Resistance = 300
Ω
di/dt < 20 A/µs
±86†
±96†
V
Source Resistance = 50
Ω
dv/dt = ±250 V/ms,
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
Source Resistance = 300
Ω
I
T
= ±5 A, t
W
= 100 µs
di/dt = -/+30 mA/ms
Linear voltage ramp,
±5
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
V
d
= 100 mV
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
82†
49†
25†
Third terminal voltage = -50 V to +50 V
(see Notes 6 and 7)
±10
140
85
40
82†
49†
25†
±10
140
85
40
µA
pF
pF
pF
±5
kV/µs
±0.15
±0.15
±0.6
±3
±0.15
±0.15
±0.6
±3
A
V
A
±72
±82
V
TEST CONDITIONS
TISP3072F3
MIN
MAX
TISP3082F3
MIN
MAX
UNIT
Impulse breakover volt- dv/dt = ±1000 V/µs,
age
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
DRM
V
(BR)M
I
DRM
V
(BR)
I
(BR)
+v
V
(BO)
I
(BO)
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
PRODUCT
INFORMATION
3
TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
† Typical value of the parameter, not a limit value.
thermal characteristics
PARAMETER
D Package
R
θ
JA
Junction to free air thermal resistance
P Package
SL Package
MIN
TYP
MAX
160
100
105
°C/W
UNIT
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC3LAF
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3LAI
Normalised to V
(BR)
1.2
10
I
D
- Off-State Current - µA
Normalised Breakdown Voltages
I
(BR)
= 100 µA and 25°C
Positive Polarity
1
1.1
0·1
V
D
= 50 V
V
D
= -50 V
V
(BR)M
1.0
V
(BR)
V
(BO)
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 2.
Figure 3.
PRODUCT
INFORMATION
4
TISP3072F3, TISP3082F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3LAJ
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
TC3LAL
Normalised to V
(BR)
1.2
Normalised Breakdown Voltages
I
(BR)
= 100 µA and 25°C
Negative Polarity
I
T
- On-State Current - A
1.1
V
(BR)M
V
(BO)
V
(BR)
10
1.0
150°C
25°C
-40°C
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
1
1
2
3
4
5
6
7 8 9 10
V
T
- On-State Voltage - V
Figure 4.
Figure 5.
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
I
H
, I
(BO)
- Holding Current, Breakover Current - A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
H
0.2
I
(BO)
TC3LAH
0.1
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 6.
PRODUCT
INFORMATION
5
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