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STP60NE06L-16

Description
MOSFET N-Ch 60 Volt 60 Amp
CategoryDiscrete semiconductor    The transistor   
File Size357KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STP60NE06L-16 Overview

MOSFET N-Ch 60 Volt 60 Amp

STP60NE06L-16 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW THRESHOLD
Avalanche Energy Efficiency Rating (Eas)400 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)60 A
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
®
STP60NE06L-16
STP60NE06L-16FP
N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP60NE06L-16
STP60NE06L-16FP
s
s
s
s
s
s
V
DSS
60 V
60 V
R
DS(on)
< 0.016
< 0.016
I
D
60 A
35 A
TYPICAL R
DS(on)
= 0.014
AVALANCHE RUGGED TECHNOLOGY
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
LOW THRESHOLD DRIVE
1
2
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Parameter
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
V
ISO
dv/dt
T
stg
T
j
May 2000
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
TO-220
b
O
so
te
le
ro
P
3
uc
d
s)
t(
3
1
2
INTERNAL SCHEMATIC DIAGRAM
P
te
le
od
r
TO-220FP
s)
t(
uc
Value
STP60NE06L-16 STP60NE06L-16FP
60
60
±
15
60
35
42
24
240
140
150
45
1
0.3
6
-65 to 175
175
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
V/ns
o
C
o
C
1/9
(•) Pulse width limited by safe operating area
(
1
) I
SD
60 A, di/dt
300 A/µs, V
DD
V
(BR)DSS
, T
j
T
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