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FC129

Description
PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)
CategoryDiscrete semiconductor    The transistor   
File Size37KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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FC129 Overview

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

FC129 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
Base Number Matches1

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