Freescale Semiconductor
Technical Data
Document Number: MHV5IC1810N
Rev. 1, 3/2011
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC1810N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 1990 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
•
Typical Two--Tone Performance: V
DD
= 28 Volts, I
DQ1
= 120 mA, I
DQ2
=
90 mA, P
out
= 5 Watts Avg., Full Frequency Band (1805--1880 MHz or
1930--1990 MHz)
Power Gain — 29 dB
Power Added Efficiency — 29%
IMD — --34 dBc
Driver Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 105 mA, I
DQ2
=
95 mA, P
out
= 35 dBm, Full Frequency Band (1805--1880 MHz or
1930--1990 MHz)
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = --67 dBc
Spectral Regrowth @ 600 kHz Offset = --76 dBc
EVM — 1.1% rms
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW
Output Power
•
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 W CW
P
out
.
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Parameters
•
On--Chip Matching (50 Ohm Input, >5 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
•
On--Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R2 Suffix = 1500 Units, 16 mm Tape Width, 13 inch Reel.
MHV5IC1810NR2
1805-
-1990 MHz, 5 W AVG., 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978-
-03
PFP-
-16
PLASTIC
V
RD1
V
RG1
V
DS1
2 Stage IC
V
DS2
/RF
out
NC
V
RD1
V
RG1
V
DS1
GND
RF
in
V
GS1
V
GS2
1
2
3
4
5
6
7
8
(Top View)
16
15
14
13
12
11
10
9
NC
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
NC
RF
in
V
GS1
V
GS2
Quiescent Current
Temperature Compensation
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1987.
©
Freescale Semiconductor, Inc., 2006, 2011. All rights reserved.
MHV5IC1810NR2
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
--0.5, +65
--0.5, +12
--65 to +150
150
12
Unit
Vdc
Vdc
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Final Application
(P
out
= 10 W CW)
Driver Application
(P
out
= 2.25 W CW)
Stage 1, 28 Vdc, I
DQ1
= 120 mA
Stage 2, 28 Vdc, I
DQ2
= 90 mA
Stage 1, 28 Vdc, I
DQ1
= 120 mA
Stage 2, 28 Vdc, I
DQ2
= 90 mA
Symbol
R
θJC
9.2
3.3
10
3.5
Value
(1)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
0 (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 1930--1990 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 120 mA, I
DQ2
= 90 mA,
P
out
= 5 W Avg., f1 = 1990 MHz, f2 = 1990.1 MHz, Two--Tone Test
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
PAE
IMD
IRL
26.5
25
—
—
29
29
--34
—
—
--27
-
-10
dB
%
dBc
dB
Typical Two-
-Tone Performances
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, I
DQ1
= 120 mA, I
DQ2
= 90 mA, P
out
=
5 W Avg., 1805--1880 MHz
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
PAE
IMD
IRL
—
—
—
—
29
29
--34
--15
—
—
—
—
dB
%
dBc
dB
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, I
DQ1
= 105 mA, I
DQ2
= 95 mA,
P
out
= 3.2 W Avg., 1805--1880 MHz or 1930--1990 MHz EDGE Modulation
Power Gain
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
EVM
SR1
SR2
—
—
—
—
29
1.1
--67
--76
—
—
—
—
dB
% rms
dBc
dBc
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MHV5IC1810NR2
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(
continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical CW Performances
(In Freescale CW Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, I
DQ1
= 120 mA, I
DQ2
= 90 mA, P
out
=
2.25 W Avg., 1805--1990 MHz
Power Gain
Power Added Efficiency
Input Return Loss
G
ps
PAE
IRL
—
—
—
29
19
--13
—
—
—
dB
%
dB
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
3
1
V
RD1
V
RG1
V
DS1
C10
RF
INPUT
5
Z1
C2
V
GS1
V
GS2
R1
R2
7
C7
C8
C3
8
C4
Z2
6
Z11
2
3
4
NC
NC
16
15
14
13
12
11
10
Z3
Z4
C13
Z5
C12
Z6
C6
C15
C14
Z7
RF
OUTPUT
Z10
C5
Z9
C9
Z8
C11
V
DS2
Quiescent Current
Temperature Compensation
NC
9
Z1
Z2
Z3
Z4
Z5
Z6
0.120″ x 0.044″ Microstrip
0.257″ x 0.044″ Microstrip
0.130″ x 0.170″ Microstrip
0.067″ x 0.122″ Microstrip
0.127″ x 0.122″ Microstrip
0.355″ x 0.084″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.273″ x 0.044″ Microstrip
0.917″ x 0.050″ Microstrip
0.304″ x 0.050″ Microstrip
0.710″ x 0.050″ Microstrip
1.296″ x 0.400″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.50
Figure 3. MHV5IC1810NR2 Test Circuit Schematic — 1930-
-1990 MHz
Table 6. MHV5IC1810NR2 Test Circuit Component Designations and Values — 1930-
-1990 MHz
Part
C2
C3, C4, C5, C6
C7, C8, C9
C10, C11
C12, C13
C14, C15
R1, R2
Description
22 pF Chip Capacitor
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μF
Chip Capacitors
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Part Number
ATC100A220GT500XT
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ATC100A0R5BT500XT
CRCW1K00FKEA
Manufacturer
ATC
ATC
AVX
TDK
ATC
ATC
Vishay
MHV5IC1810NR2
4
RF Device Data
Freescale Semiconductor
V
D1
V
D2
C11
C10
C5
C9
C2
C13
C12
C6
C14
C15
C3
C7
C4
MHV5IC1810N
Rev. 0
C8
R2
R1
V
GS1
V
GS2
Figure 4. MHV5IC1810NR2 Test Circuit Component Layout — 1930-
-1990 MHz
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
5
Test/Measurement
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