MOSFET N-Ch 900 Volt 40 Amp
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | STMicroelectronics |
| Parts packaging code | ISOTOP |
| package instruction | ROHS COMPLIANT, ISOTOP-4 |
| Contacts | 4 |
| Manufacturer packaging code | ISOTOP |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 1200 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 900 V |
| Maximum drain current (Abs) (ID) | 40 A |
| Maximum drain current (ID) | 40 A |
| Maximum drain-source on-resistance | 0.18 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PUFM-X4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 600 W |
| Maximum pulsed drain current (IDM) | 160 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Nickel (Ni) |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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