MOSFET RAIL PWR-MOS
Parameter Name | Attribute value |
Product Category | MOSFET |
Manufacturer | NXP |
RoHS | Details |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 66 A |
Rds On - Drain-Source Resistance | 15 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Channel Mode | Enhancement |
Packaging | Tube |
Fall Time | 130 ns |
Height | 9.4 mm |
Length | 10.3 mm |
Pd - Power Dissipation | 138 W |
Rise Time | 130 ns |
Factory Pack Quantity | 1000 |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 400 ns |
Typical Turn-On Delay Time | 45 ns |
Width | 4.5 mm |
Unit Weight | 0.211644 oz |