F1058 datasheet, PDF - EEWORLD Datasheet

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F1058: DescriptionPATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size29KB，2 Pages; ManufacturerPolyfet RF Devices; Websitehttp://www.polyfet.com/; Environmental Compliance

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F1058 Overview

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1058 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Polyfet RF Devices
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL

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polyfet rf devices

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

"Polyfet" process features

gold metal for greatly extended

lifetime. Low output capacitance

and high F

enhance broadband

performance

F1058

PATENTED GOLD METALIZED

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

30 Watts Push - Pull

Package Style AQ

HIGH EFFICIENCY, LINEAR,

HIGH GAIN, LOW NOISE

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

Total

Device

Dissipation

100 Watts

Junction to

Case Thermal

Resistance

1.75

C/W

Maximum

Junction

Temperature

200

Storage

Temperature

DC Drain

Current

Drain to

Gate

Voltage

70 V

Drain to

Source

Voltage

70 V

Gate to

Source

Voltage

30V

-65

C to 150

4 A

RF CHARACTERISTICS (

SYMBOL

Gps

PARAMETER

Common Source Power Gai

Drain Efficiency

Load Mismatch Toleranc

MIN

TYP

30WATTS OUTPUT )

MAX

UNITS

20:1

Relative

TEST CONDITIONS

Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz

VSWR

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

Bvdss

Idss

Igss

Vgs

Rdson

Idsat

Ciss

Crss

Coss

PARAMETER

Drain Breakdown Voltag

Zero Bias Drain Curren

Gate Leakage Curren

Gate Bias for Drain Curren

Forward Transconductanc

Saturation Resistanc

Saturation Curren

Common Source Input Capacitanc

Common Source Feedback Capacitanc

Common Source Output Capacitanc

0.8

5.5

MIN

TYP

MAX

UNITS

Mho

Ohm

Amp

TEST CONDITIONS

Ids = 0.05 A,

Vds = 28.0 V,

Vds = 0 V,

Ids = 0.1 A,

Vgs = 0V

Vgs = 30V

Vgs = Vds

Vds = 10V, Vgs = 5V

Vgs = 20V, Ids = 4 A

Vgs = 20V, Vds = 10V

Vds = 28.0 V, Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

REVISION 8/1/97

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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