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MTB30N06VL

Description
TMOS POWER FET 30 AMPERES 60 VOLTS
CategoryDiscrete semiconductor    The transistor   
File Size152KB,10 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MTB30N06VL Overview

TMOS POWER FET 30 AMPERES 60 VOLTS

MTB30N06VL Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)154 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)190 pF
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment90 W
Maximum power dissipation(Abs)90 W
Maximum pulsed drain current (IDM)105 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)330 ns
Maximum opening time (tons)550 ns
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