ES1D datasheet, PDF - EEWORLD Datasheet

ES1D: Description1 A, 200 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size69KB，2 Pages; ManufacturerGE Sensing ( Amphenol Advanced Sensors ); Websitehttp://www.vishay.com/

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1 A, 200 V, SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, SMA, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	PURE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0200 us
Maximum repetitive peak reverse voltage	200 V
Maximum average forward current	1 A

	ES1D	ES1A	ES1B	ES1C
Description	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	2	2	2	2
Number of components	1	1	1	1
Processing package description	Plastic, SMA, 2 PIN	Plastic, SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN	SMA, 2 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	C BEND	C BEND	C BEND	C BEND
Terminal location	pair	pair	pair	DUAL
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY
structure	single	single	single	SINGLE
Diode component materials	silicon	silicon	silicon	SILICON
Diode type	Signal diode	Signal diode	Signal diode	SIGNAL DIODE
Maximum reverse recovery time	0.0200 us	0.0200 us	0.0350 us	0.0150 us
Maximum repetitive peak reverse voltage	200 V	50 V	100 V	150 V
Maximum average forward current	1 A	1 A	1 A	1 A
terminal coating	PURE Tin	-	PURE Tin	MATTE TIN

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