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ES1B

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size69KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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ES1B Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

ES1B Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC, SMA, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current1 A

ES1B Related Products

ES1B ES1A ES1C ES1D
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 2 2
Number of components 1 1 1 1
Processing package description GREEN, PLASTIC, SMA, 2 PIN Plastic, SMA, 2 PIN SMA, 2 PIN Plastic, SMA, 2 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle RECTANGULAR Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form C BEND C BEND C BEND C BEND
Terminal location pair pair DUAL pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
structure single single SINGLE single
Diode component materials silicon silicon SILICON silicon
Diode type Signal diode Signal diode SIGNAL DIODE Signal diode
Maximum reverse recovery time 0.0350 us 0.0200 us 0.0150 us 0.0200 us
Maximum repetitive peak reverse voltage 100 V 50 V 150 V 200 V
Maximum average forward current 1 A 1 A 1 A 1 A
terminal coating PURE Tin - MATTE TIN PURE Tin

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