1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
Parameter Name | Attribute value |
Number of terminals | 2 |
Number of components | 1 |
Processing package description | GREEN, PLASTIC, SMA, 2 PIN |
state | ACTIVE |
packaging shape | Rectangle |
Package Size | SMALL OUTLINE |
surface mount | Yes |
Terminal form | C BEND |
terminal coating | PURE Tin |
Terminal location | pair |
Packaging Materials | Plastic/Epoxy |
structure | single |
Diode component materials | silicon |
Diode type | Signal diode |
Maximum reverse recovery time | 0.0350 us |
Maximum repetitive peak reverse voltage | 100 V |
Maximum average forward current | 1 A |
ES1B | ES1A | ES1C | ES1D | |
---|---|---|---|---|
Description | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC | 1 A, 50 V, SILICON, SIGNAL DIODE | 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC | 1 A, 200 V, SILICON, SIGNAL DIODE |
Number of terminals | 2 | 2 | 2 | 2 |
Number of components | 1 | 1 | 1 | 1 |
Processing package description | GREEN, PLASTIC, SMA, 2 PIN | Plastic, SMA, 2 PIN | SMA, 2 PIN | Plastic, SMA, 2 PIN |
state | ACTIVE | ACTIVE | ACTIVE | ACTIVE |
packaging shape | Rectangle | Rectangle | RECTANGULAR | Rectangle |
Package Size | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
surface mount | Yes | Yes | Yes | Yes |
Terminal form | C BEND | C BEND | C BEND | C BEND |
Terminal location | pair | pair | DUAL | pair |
Packaging Materials | Plastic/Epoxy | Plastic/Epoxy | PLASTIC/EPOXY | Plastic/Epoxy |
structure | single | single | SINGLE | single |
Diode component materials | silicon | silicon | SILICON | silicon |
Diode type | Signal diode | Signal diode | SIGNAL DIODE | Signal diode |
Maximum reverse recovery time | 0.0350 us | 0.0200 us | 0.0150 us | 0.0200 us |
Maximum repetitive peak reverse voltage | 100 V | 50 V | 150 V | 200 V |
Maximum average forward current | 1 A | 1 A | 1 A | 1 A |
terminal coating | PURE Tin | - | MATTE TIN | PURE Tin |