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IXFC26N50P

Description
MOSFET 500V 26A
Categorysemiconductor    Discrete semiconductor   
File Size167KB,5 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXFC26N50P Overview

MOSFET 500V 26A

IXFC26N50P Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerIXYS ( Littelfuse )
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current15 A
Rds On - Drain-Source Resistance260 mOhms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Channel ModeEnhancement
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min28 S
Height16 mm
Length11 mm
Pd - Power Dissipation130 W
Rise Time25 ns
Factory Pack Quantity50
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Typical Turn-On Delay Time20 ns
Width5 mm
Unit Weight0.056438 oz
PolarHV
TM
HiPerFET
Power MOSFET
ISOPLUS 220
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25° C to 150° C
IXFC 26N50P
(Electrically Isolated Tab)
V
DSS
=
=
I
D25
R
DS(on)
trr
500
V
15
A
260 mΩ
250 ns
Maximum Ratings
500
500
±30
±40
15
78
26
40
1.0
20
130
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
ISOPLUS220
TM
(IXFC)
E153432
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150° C, R
G
= 4
T
C
= 25° C
G
D
S
(Isolated Tab)
G = Gate
S = Source
D = Drain
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
300
2500
11..65/2.5..15
2
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
l
l
l
l
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.5
±100
25
250
260
V
V
nA
µA
µA
m
l
l
l
Advantages
Easy assembly
Space savings
High power density
V
GS
= 10 V, I
D
= I
T
Pulse test, t
300
µs,
duty cycle d
2 %
© 2006 IXYS All rights reserved
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