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JANS2N3737UB

Description
Bipolar Transistors - BJT Small-Signal BJT
CategoryDiscrete semiconductor    The transistor   
File Size175KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANS2N3737UB Overview

Bipolar Transistors - BJT Small-Signal BJT

JANS2N3737UB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-CDSO-N3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-CDSO-N3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/395
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)60 ns
Maximum opening time (tons)48 ns
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/395
DEVICES
LEVELS
2N3735
2N3737
2N3735L
2N3737UB
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
Total Power Dissipation
@ TC = +25°C
2N3735, 2N3735L
2N3737
2N3737UB
2N3735, 2N3735L
2N3737
2N3737UB
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Min.
40
75
5
1.5
1.0 (1)
0.5 (3)
0.5 (5)
2.9 (2)
1.9 (4)
N/A
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
W
W
W
W
°C
TO-5*
2N3735L
P
T
T
J
, T
stg
Operating & Storage Junction Temperature Range
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
(1) Derate linearly at 5.71 mW/°C above T
A
= +25°C
(2) Derate linearly at 16.6 mW/°C above T
A
= +25°C
(3) Derate linearly at 2.86 mW/°C above T
A
= +25°C
(4) Derate linearly at 11.3 mW/°C above T
A
= +25°C
(5) Derate linearly at 3.07 mW/°C above T
A
= +25°C
(6) T
A
= +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1
– layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2
mm), R
θJA
with a defined thermal resistance condition included is measured at P
T
=
500mW.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 30Vd
V
(BR)CEO
I
CBO
40
10
250
Vdc
μAdc
ηAdc
Symbol
Min.
Max.
Unit
TO-39* (TO-205AD)
2N3735
3 PIN
2N3737UB
TO-46 (TO-206AB)
2N3737
Page 1 of 5
T4-LDS-0173 Rev. 1 (101069)

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Description Bipolar Transistors - BJT Small-Signal BJT Fixed Resistor, Thin Film, 0.1W, 129ohm, 75V, 0.05% +/-Tol, 15ppm/Cel, 0603, Bipolar Transistors - BJT Small-Signal BJT Fixed Resistor, Metal Film, 0.5W, 218000ohm, 250V, 0.5% +/-Tol, 25ppm/Cel, Bipolar Transistors - BJT Small-Signal BJT Bipolar Transistors - BJT Small-Signal BJT Bipolar Transistors - BJT Small-Signal BJT Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
Is it Rohs certified? incompatible conform to incompatible conform to incompatible incompatible incompatible incompatible
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609 code e0 e3 e0 e3 e0 e0 e0 e0
Number of terminals 3 2 3 2 3 3 3 3
Maximum operating temperature 200 °C 155 °C 200 °C 160 °C 200 °C 200 °C 200 °C 200 °C
Package form SMALL OUTLINE SMT SMALL OUTLINE Axial CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Terminal surface TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD TIN LEAD
Is it lead-free? Contains lead - Contains lead - Contains lead Contains lead Contains lead Contains lead
Parts packaging code SOT - TO-46 - BCY TO-5 BCY -
package instruction SMALL OUTLINE, R-CDSO-N3 - SMALL OUTLINE, R-CDSO-N3 - CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 TO-39, 3 PIN
Contacts 3 - 3 - 3 3 3 -
Maximum collector current (IC) 1.5 A - 1.5 A - 1.5 A 1.5 A 1.5 A 1.5 A
Collector-emitter maximum voltage 40 V - 40 V - 40 V 40 V 40 V 40 V
Configuration SINGLE - SINGLE - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 - 20 - 20 20 20 20
JESD-30 code R-CDSO-N3 - R-CDSO-N3 - O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 - 1 - 1 1 1 1
Package body material CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED - METAL METAL METAL METAL
Package shape RECTANGULAR - RECTANGULAR CYLINDRICAL PACKAGE ROUND ROUND ROUND ROUND
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN - NPN - NPN NPN NPN NPN
Certification status Not Qualified - Qualified - Qualified Not Qualified Not Qualified Not Qualified
surface mount YES - YES - NO NO NO NO
Terminal form NO LEAD - NO LEAD - WIRE WIRE WIRE WIRE
Terminal location DUAL - DUAL - BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING - SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON - SILICON SILICON SILICON SILICON
Maximum off time (toff) 60 ns - 60 ns - 60 ns 60 ns 60 ns 60 ns
Maximum opening time (tons) 48 ns - 48 ns - 48 ns 48 ns 48 ns 48 ns
Base Number Matches 1 - 1 - 1 1 1 -
JEDEC-95 code - - TO-46 - TO-206AB TO-5 TO-206AB TO-205AD

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