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JANTXV2N3735

Description
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size175KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N3735 Overview

Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANTXV2N3735 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2124504691
package instructionTO-39, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/395
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)60 ns
Maximum opening time (tons)48 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/395
DEVICES
LEVELS
2N3735
2N3737
2N3735L
2N3737UB
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
Total Power Dissipation
@ TC = +25°C
2N3735, 2N3735L
2N3737
2N3737UB
2N3735, 2N3735L
2N3737
2N3737UB
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Min.
40
75
5
1.5
1.0 (1)
0.5 (3)
0.5 (5)
2.9 (2)
1.9 (4)
N/A
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
W
W
W
W
°C
TO-5*
2N3735L
P
T
T
J
, T
stg
Operating & Storage Junction Temperature Range
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
(1) Derate linearly at 5.71 mW/°C above T
A
= +25°C
(2) Derate linearly at 16.6 mW/°C above T
A
= +25°C
(3) Derate linearly at 2.86 mW/°C above T
A
= +25°C
(4) Derate linearly at 11.3 mW/°C above T
A
= +25°C
(5) Derate linearly at 3.07 mW/°C above T
A
= +25°C
(6) T
A
= +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1
– layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2
mm), R
θJA
with a defined thermal resistance condition included is measured at P
T
=
500mW.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 30Vd
V
(BR)CEO
I
CBO
40
10
250
Vdc
μAdc
ηAdc
Symbol
Min.
Max.
Unit
TO-39* (TO-205AD)
2N3735
3 PIN
2N3737UB
TO-46 (TO-206AB)
2N3737
Page 1 of 5
T4-LDS-0173 Rev. 1 (101069)

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Is it Rohs certified? incompatible incompatible conform to incompatible conform to incompatible incompatible incompatible
Reach Compliance Code unknown compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609 code e0 e0 e3 e0 e3 e0 e0 e0
Number of terminals 3 3 2 3 2 3 3 3
Maximum operating temperature 200 °C 200 °C 155 °C 200 °C 160 °C 200 °C 200 °C 200 °C
Package form CYLINDRICAL SMALL OUTLINE SMT SMALL OUTLINE Axial CYLINDRICAL CYLINDRICAL CYLINDRICAL
Terminal surface TIN LEAD TIN LEAD Matte Tin (Sn) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD
Is it lead-free? Contains lead Contains lead - Contains lead - Contains lead Contains lead Contains lead
package instruction TO-39, 3 PIN SMALL OUTLINE, R-CDSO-N3 - SMALL OUTLINE, R-CDSO-N3 - CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Maximum collector current (IC) 1.5 A 1.5 A - 1.5 A - 1.5 A 1.5 A 1.5 A
Collector-emitter maximum voltage 40 V 40 V - 40 V - 40 V 40 V 40 V
Configuration SINGLE SINGLE - SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 - 20 - 20 20 20
JEDEC-95 code TO-205AD - - TO-46 - TO-206AB TO-5 TO-206AB
JESD-30 code O-MBCY-W3 R-CDSO-N3 - R-CDSO-N3 - O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 - 1 - 1 1 1
Package body material METAL CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED - METAL METAL METAL
Package shape ROUND RECTANGULAR - RECTANGULAR CYLINDRICAL PACKAGE ROUND ROUND ROUND
Polarity/channel type NPN NPN - NPN - NPN NPN NPN
Certification status Not Qualified Not Qualified - Qualified - Qualified Not Qualified Not Qualified
surface mount NO YES - YES - NO NO NO
Terminal form WIRE NO LEAD - NO LEAD - WIRE WIRE WIRE
Terminal location BOTTOM DUAL - DUAL - BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING - SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON - SILICON SILICON SILICON
Maximum off time (toff) 60 ns 60 ns - 60 ns - 60 ns 60 ns 60 ns
Maximum opening time (tons) 48 ns 48 ns - 48 ns - 48 ns 48 ns 48 ns
Parts packaging code - SOT - TO-46 - BCY TO-5 BCY
Contacts - 3 - 3 - 3 3 3
Peak Reflow Temperature (Celsius) - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches - 1 - 1 - 1 1 1

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