NTE63
Silicon NPN Transistor
High Gain, Low Noise Amp
Description:
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.
Features:
D
High Current Gain–Bandwidth Product: f
T
= 5GHz Typ @ f = 1GHz
D
High Power Gain: G
pe
= 12.5dB Min @ f = 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Total Device Dissipation (T
L
= +50°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Lead, R
thJL
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
12
20
2
–
–
–
–
–
–
–
–
50
V
V
V
nA
Symbol
Test Conditions
Min
Typ Max Unit
Electrical Characteristics (Cont’d):
(T
C
= +25°C unless otherwise specified)
Parameter
ON Characteristics
DC Current Gain
Dynamic Characteristics
Current Gain–Bandwidth Product
Collector–Base Capacitance
Functional Tests
Noise Figure
Power Gain at Optimum Noise Figure
Maximum Available Power Gain
(Note 1)
NF
MIN
G
NF
G
max
I
C
= 5mA, V
CE
= 10V, f = 1GHz
I
C
= 5mA, V
CE
= 10V, f = 2GHz
I
C
= 5mA, V
CE
= 10V, f = 1GHz
I
C
= 5mA, V
CE
= 10V, f = 2GHz
I
C
= 30mA, V
CE
= 10V, f = 1GHz
I
C
= 30mA, V
CE
= 10V, f = 2GHz
–
–
–
–
–
–
2.5
4.0
10
6
12.5
7.5
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
f
T
C
cb
I
C
= 30mA, V
CE
= 10V,
f = 1GHz
V
CB
= 10V, I
E
= 0, f = 1MHz
–
–
5.0
0.6
–
1.0
GHz
pF
h
FE
I
C
= 30mA, V
CE
= 10V
30
–
200
Symbol
Test Conditions
Min
Typ Max Unit
Note1.G
max
= |S
21
|
2
/ (I – |S
11
|
2
) (I – |S
22
|
2
)
.075 (1.9) Min
C
Seating Plane
.770
(19.5)
Max
E
E
.190
(4.83)
Dia
.325
(8.27)
Max
B
.036 (0.92)
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