TC4431CPA datasheet, PDF - EEWORLD Datasheet

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TC4431CPA: Description1.5A high-speed 30v mosfet drivers; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size58KB，4 Pages; ManufacturerTelCom Semiconductor, Inc. (Microchip Technology); Websitehttp://www.telcom-semi.com/

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TC4431CPA Overview

1.5A high-speed 30v mosfet drivers

TC4431CPA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TelCom Semiconductor, Inc. (Microchip Technology)
package instruction	DIP, DIP8,.3
Reach Compliance Code	unknown
Other features	UNDER VOLTAGE LOCKOUT CIRCUIT
high side driver	NO
Input properties	SCHMITT TRIGGER
Interface integrated circuit type	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code	R-PDIP-T8
JESD-609 code	e0
Number of functions	1
Number of terminals	8
Maximum operating temperature	70 °C
Minimum operating temperature
Output characteristics	OPEN-DRAIN
Nominal output peak current	3 A
Output polarity	INVERTED
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5/30 V
Certification status	Not Qualified
surface mount	NO
technology	BICMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Disconnect time	0.1 µs
connection time	0.11 µs

TC4431CPA Related Products

	TC4431CPA	TC4431EPA	TC4431EOA	TC4431EJA	TC4431COA
Description	1.5A high-speed 30v mosfet drivers	1.5A high-speed 30v mosfet drivers	1.5A high-speed 30v mosfet drivers	1.5A high-speed 30v mosfet drivers	1.5A high-speed 30v mosfet drivers
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	TelCom Semiconductor, Inc. (Microchip Technology)	TelCom Semiconductor, Inc. (Microchip Technology)	TelCom Semiconductor, Inc. (Microchip Technology)	TelCom Semiconductor, Inc. (Microchip Technology)	TelCom Semiconductor, Inc. (Microchip Technology)
package instruction	DIP, DIP8,.3	DIP, DIP8,.3	SO-8	DIP, DIP8,.3	SO-8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Other features	UNDER VOLTAGE LOCKOUT CIRCUIT	UNDER VOLTAGE LOCKOUT CIRCUIT	UNDER VOLTAGE LOCKOUT CIRCUIT	UNDER VOLTAGE LOCKOUT CIRCUIT	UNDER VOLTAGE LOCKOUT CIRCUIT
high side driver	NO	NO	NO	NO	NO
Input properties	SCHMITT TRIGGER	SCHMITT TRIGGER	SCHMITT TRIGGER	SCHMITT TRIGGER	SCHMITT TRIGGER
Interface integrated circuit type	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code	R-PDIP-T8	R-PDIP-T8	R-PDSO-G8	R-GDIP-T8	R-PDSO-G8
JESD-609 code	e0	e0	e0	e0	e0
Number of functions	1	1	1	1	1
Number of terminals	8	8	8	8	8
Maximum operating temperature	70 °C	85 °C	85 °C	85 °C	70 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-
Output characteristics	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN
Nominal output peak current	3 A	3 A	3 A	3 A	3 A
Output polarity	INVERTED	INVERTED	INVERTED	INVERTED	INVERTED
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY
encapsulated code	DIP	DIP	SOP	DIP	SOP
Encapsulate equivalent code	DIP8,.3	DIP8,.3	SOP8,.25	DIP8,.3	SOP8,.25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
power supply	5/30 V	5/30 V	5/30 V	5/30 V	5/30 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	NO	YES
technology	BICMOS	BICMOS	BICMOS	BICMOS	BICMOS
Temperature level	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Disconnect time	0.1 µs	0.1 µs	0.1 µs	0.1 µs	0.1 µs
connection time	0.11 µs	0.11 µs	0.11 µs	0.11 µs	0.11 µs

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